scholarly journals Erratum: ‘‘Valence energy‐band structure for strained group IV semiconductors’’ [J. Appl. Phys. 73, 1205 (1993)]

1993 ◽  
Vol 74 (7) ◽  
pp. 4803-4803
Author(s):  
T. Manku ◽  
A. Nathan
Keyword(s):  
Band Structure ◽  
Energy Band ◽  
Group Iv ◽  
Energy Band Structure ◽  
Group Iv Semiconductors

scholarly journals Solution of Secular Determinants for Group IV And III?V Semiconductors by Symmetry Analysis

1973 ◽  
Vol 26 (4) ◽  
pp. 501 ◽  
Author(s):  
SJ Joshua ◽  
D Morgan
Keyword(s):  
Band Structure ◽  
Numerical Solution ◽  
Energy Band ◽  
Form Factors ◽  
Group Iv ◽  
Energy Band Structure ◽  
High Symmetry ◽  
Orthogonal Matrices ◽  
Symmetry Properties ◽  
Secular Determinant

A brief discussion is given of the symmetry properties of the energy band structure and the method of constructing orthogonal matrices at high symmetry points for group IV and III-V semiconductors. By means of examples it is shown how to factorize the n x n secular determinant formed by using the pseudopotential form factors of Cohen and Bergstresser (1966), thereby permitting easy numerical solution.

Energy Band Structure of Germanium

1967 ◽  
Vol 22 (2) ◽  
pp. 491-497 ◽  
Author(s):  
D. J. Morgan ◽  
J. A. Galloway
Keyword(s):  
Band Structure ◽  
Energy Band ◽  
Energy Band Structure

The Energy Band Structure of Polyacene with Soliton Excitation

1997 ◽  
Vol 11 (11) ◽  
pp. 477-483 ◽  
Author(s):  
Z. J. Li ◽  
H. B. Xu ◽  
K. L. Yao
Keyword(s):  
Band Structure ◽  
Charge Density ◽  
Energy Band ◽  
Energy Gap ◽  
Electronic States ◽  
Energy Band Structure ◽  
Energy Spectra ◽  
Energy Band Gap ◽  
The One ◽  
Soliton Excitation

Starting from the extensional Su–Schrieffer–Heeger model taking into account the effects of interchain coupling, we have studied the energy spectra and electronic states of soliton excitation in polyacene. The dimerized displacement u0 is found to be similar to the case of trans-polyacetylene, and equals to 0.04 Å. The energy-band gap is 0.38 eV, in agreement with the results derived by other authors. Two new bound electronic states have been found in the conduction band and in the valence band, which is different from the one of trans-polyacetylene. There exists two degenerate soliton states in the center of energy gap. Furthermore, the distribution of charge density and spin density have been discussed in detail.

Effect of energy-band structure on magnetoresistance in n-type InSb

1975 ◽  
Vol 19 (3-4) ◽  
pp. 269-289 ◽  
Author(s):  
Chhi-Chong Wu ◽  
Jensan Tsai ◽  
Chung-Chan Wu
Keyword(s):  
Band Structure ◽  
Energy Band ◽  
Energy Band Structure
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