An analytical saturation region model for amorphous silicon thin film transistors using a quasi‐two‐dimensional and an effective temperature approach

1994 ◽  
Vol 75 (12) ◽  
pp. 7935-7941
Author(s):  
S. S. Chen ◽  
J. B. Kuo
1991 ◽  
Vol 30 (Part 2, No. 2A) ◽  
pp. L145-L148 ◽  
Author(s):  
Tatsumi Ishizuka ◽  
Kazuki Sumino ◽  
Yasuroh Iriye ◽  
Masataka Hirose

Author(s):  
T. Toyabe ◽  
H. Masuda ◽  
Y. Kaneko ◽  
A. Sasano ◽  
H. Fukushima ◽  
...  

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