scholarly journals Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032133 ◽  
Author(s):  
Jia-Tao Sun ◽  
Andrew Thye Shen Wee ◽  
Yuan Ping Feng
Keyword(s):  
Boron Nitride ◽  
Theoretical Investigation ◽  
Electronic Structures ◽  
Carrier Transport

Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films

2016 ◽  
Vol 9 (6) ◽  
pp. 065801 ◽  
Author(s):  
Rajendra Dahal ◽  
Kawser Ahmed ◽  
Jia Woei Wu ◽  
Adam Weltz ◽  
James Jian-Qiang Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Hexagonal Boron Nitride ◽  
Charge Carrier Transport ◽  
Free Standing

scholarly journals Theoretical Investigation of Electronic Structures, Elastic, and Magnetic Properties of Rh2CrGe Full-Heusler Alloy

2019 ◽  
Vol 136 (3) ◽  
pp. 454-459
Author(s):  
M. Mebrek ◽  
A. Mokaddem ◽  
F. Bouasria ◽  
B. Doumi ◽  
A. Mir ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Theoretical Investigation ◽  
Electronic Structures ◽  
Heusler Alloy ◽  
Full Heusler

scholarly journals Tuning Electronic Structures of BN and C Double-Wall Hetero-Nanotubes

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Xueran Liu ◽  
Meijun Han ◽  
Xinjiang Zhang ◽  
Haijun Hou ◽  
Shaoping Pang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Electronic Structures ◽  
Density Functional ◽  
Transverse Electric ◽  
First Principle ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Generalized Gradient Approximation ◽  
Double Wall

First principle calculations based on density functional theory with the generalized gradient approximation were carried out to investigate the energetic and electronic properties of carbon and boron nitride double-wall hetero-nanotubes (C/BN-DWHNTs) with different chirality and size, including an armchair (n,n) carbon nanotube (CNT) enclosed in (m,m) boron nitride nanotube (BNNT) and a zigzag (n, 0) CNT enclosed in (m, 0) BNNT. The electronic structure of these DWHNTs under a transverse electric field was also investigated. The ability to tune the band gap with changing the intertube distance (di) and imposing an external electric field (F) of zigzag DWHNTs provides the possibility for future electronic and electrooptic nanodevice applications.

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