Electrical modulation of the optical properties of mid-infrared metamaterials

2012 ◽  
Vol 101 (25) ◽  
pp. 251109 ◽  
Author(s):  
K. Larsen ◽  
D. Austin ◽  
I. C. Sandall ◽  
D. G. Davies ◽  
D. G. Revin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Mid Infrared ◽  
Electrical Modulation

Preparation and optical properties of TeO 2 –BaO–ZnO–ZnF 2 fluoro-tellurite glass for mid-infrared fiber Raman laser applications

2017 ◽  
Vol 66 ◽  
pp. 567-572 ◽  
Author(s):  
Jie Li ◽  
Xusheng Xiao ◽  
Shaoxuan Gu ◽  
Yantao Xu ◽  
Zhiguang Zhou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Tellurite Glass ◽  
Raman Laser ◽  
Laser Applications ◽  
Mid Infrared

scholarly journals Electrical modulation of the complex refractive index in mid-infrared quantum cascade lasers

2012 ◽  
Vol 20 (2) ◽  
pp. 1172 ◽  
Author(s):  
J. Teissier ◽  
S. Laurent ◽  
C. Manquest ◽  
C. Sirtori ◽  
A. Bousseksou ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quantum Cascade Lasers ◽  
Complex Refractive Index ◽  
Mid Infrared ◽  
Quantum Cascade ◽  
Electrical Modulation ◽  
Cascade Lasers

scholarly journals Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

2015 ◽  
Vol 117 (22) ◽  
pp. 223106 ◽  
Author(s):  
Vijay Richard D'Costa ◽  
Kian Hua Tan ◽  
Bo Wen Jia ◽  
Soon Fatt Yoon ◽  
Yee-Chia Yeo
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mid Infrared

Optical properties enhancement of buckled Bismuthene in mid-infrared region: a theoretical first-principle study

2020 ◽  
Vol 46 (13) ◽  
pp. 1004-1010
Author(s):  
Zhenlu Sun ◽  
Hongwei Chu ◽  
Shengzhi Zhao ◽  
Guiqiu Li ◽  
Dechun Li
Keyword(s):  
Optical Properties ◽  
Infrared Region ◽  
First Principle ◽  
Mid Infrared

Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures

2018 ◽  
Vol 386 ◽  
pp. 68-74 ◽  
Author(s):  
Anatoly Dvurechenskii ◽  
Andrew Yakimov ◽  
Victor Kirienko ◽  
Alekcei Bloshkin ◽  
Vladimir Zinovyev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Mid Infrared ◽  
Device Application ◽  
Elemental Compositions ◽  
New Approaches ◽  
Ge Quantum Dots ◽  
Silicon Based ◽  
Is Strain

New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

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