Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4819108 ◽

2013 ◽

Vol 114 (8) ◽

pp. 084108 ◽

Author(s):

J. W. Liu ◽

M. Y. Liao ◽

M. Imura ◽

H. Oosato ◽

E. Watanabe ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.110201 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 110201 ◽

Author(s):

Yoshihiro Ueoka ◽

Kenta Shingu ◽

Hiroshi Yano ◽

Tomoaki Hatayama ◽

Takashi Fuyuki

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.046504 ◽

2012 ◽

Vol 51 (4R) ◽

pp. 046504 ◽

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.104203 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 104203 ◽

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

Kosuke Nagashio ◽

Koji Kita ◽

...

Keyword(s):

Surface Roughness ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Deionized Water ◽

Oxide Semiconductor

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Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Applied Physics Letters ◽

10.1063/1.4908123 ◽

2015 ◽

Vol 106 (6) ◽

pp. 062104 ◽

Author(s):

G. Ortiz ◽

C. Strenger ◽

V. Uhnevionak ◽

A. Burenkov ◽

A. J. Bauer ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Hall Effect ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Acceptor Concentration ◽

Density Of Interface States

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Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Journal of Applied Physics ◽

10.1063/1.3647589 ◽

2011 ◽

Vol 110 (8) ◽

pp. 084501 ◽

Author(s):

M. Eickelkamp ◽

M. Weingarten ◽

L. Rahimzadeh Khoshroo ◽

N. Ketteniss ◽

H. Behmenburg ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.046504 ◽

2012 ◽

Vol 51 ◽

pp. 046504

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.110201 ◽

2012 ◽

Vol 51 ◽

pp. 110201 ◽

Author(s):

Yoshihiro Ueoka ◽

Kenta Shingu ◽

Hiroshi Yano ◽

Tomoaki Hatayama ◽

Takashi Fuyuki

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.104203 ◽

2012 ◽

Vol 51 ◽

pp. 104203 ◽

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

Kosuke Nagashio ◽

Koji Kita ◽

...

Keyword(s):

Surface Roughness ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Deionized Water ◽

Oxide Semiconductor

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Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) face

Applied Physics Letters ◽

10.1063/1.1682680 ◽

2004 ◽

Vol 84 (12) ◽

pp. 2088-2090 ◽

Author(s):

Kenji Fukuda ◽

Makoto Kato ◽

Kazutoshi Kojima ◽

Junji Senzaki

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxidation Method

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Physical and electrical properties of lanthanide-incorporated tantalum nitride for n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1947901 ◽

2005 ◽

Vol 87 (7) ◽

pp. 073506 ◽

Author(s):

C. Ren ◽

D. S. H. Chan ◽

X. P. Wang ◽

B. B. Faizhal ◽

M.-F. Li ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Tantalum Nitride ◽

Oxide Semiconductor

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