Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Applied Physics Letters ◽

10.1063/1.4908123 ◽

2015 ◽

Vol 106 (6) ◽

pp. 062104 ◽

Author(s):

G. Ortiz ◽

C. Strenger ◽

V. Uhnevionak ◽

A. Burenkov ◽

A. J. Bauer ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Hall Effect ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Acceptor Concentration ◽

Density Of Interface States

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Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4819108 ◽

2013 ◽

Vol 114 (8) ◽

pp. 084108 ◽

Author(s):

J. W. Liu ◽

M. Y. Liao ◽

M. Imura ◽

H. Oosato ◽

E. Watanabe ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Assessment of hot‐hole‐induced interface states and trapped carriers in submicronn(metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement

Applied Physics Letters ◽

10.1063/1.112121 ◽

1994 ◽

Vol 65 (9) ◽

pp. 1139-1141 ◽

Author(s):

R. Ghodsi ◽

Y. T. Yeow ◽

M. K. Alam

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Measurement

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Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal–Oxide–Semiconductor Field-Effect Transistors on Off-Axis Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.110201 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 110201 ◽

Author(s):

Yoshihiro Ueoka ◽

Kenta Shingu ◽

Hiroshi Yano ◽

Tomoaki Hatayama ◽

Takashi Fuyuki

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.046504 ◽

2012 ◽

Vol 51 (4R) ◽

pp. 046504 ◽

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.104203 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 104203 ◽

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

Kosuke Nagashio ◽

Koji Kita ◽

...

Keyword(s):

Surface Roughness ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Deionized Water ◽

Oxide Semiconductor

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Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Semiconductors ◽

10.1134/s1063782618020203 ◽

2018 ◽

Vol 52 (2) ◽

pp. 242-247 ◽

Author(s):

S. E. Tyaginov ◽

A. A. Makarov ◽

M. Jech ◽

M. I. Vexler ◽

J. Franco ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Charge Carriers ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Self Consistent ◽

Physical Principles

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Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.3231924 ◽

2009 ◽

Vol 95 (12) ◽

pp. 123508 ◽

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Noise ◽

Frequency Channel

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Post‐irradiation cracking of H2and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.353348 ◽

1993 ◽

Vol 73 (2) ◽

pp. 658-667 ◽

Author(s):

R. E. Stahlbush ◽

A. H. Edwards ◽

D. L. Griscom ◽

B. J. Mrstik

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Post Irradiation

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Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Journal of Applied Physics ◽

10.1063/1.3647589 ◽

2011 ◽

Vol 110 (8) ◽

pp. 084501 ◽

Author(s):

M. Eickelkamp ◽

M. Weingarten ◽

L. Rahimzadeh Khoshroo ◽

N. Ketteniss ◽

H. Behmenburg ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.046504 ◽

2012 ◽

Vol 51 ◽

pp. 046504

Author(s):

Mitsuo Okamoto ◽

Miwako Iijima ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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