Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

2014 ◽  
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Seung Wook Ryu ◽  
Seongjae Cho ◽  
Joonsuk Park ◽  
Jungsuk Kwac ◽  
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Resistive Switching ◽  
Resistive Switching Memory ◽  
Memory Characteristics ◽  
Switching Memory

scholarly journals Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

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Siddheswar Maikap ◽  
Hsien-Chin Chiu ◽  
Ta-Chang Tien ◽  
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Resistive Switching ◽  
Resistive Switching Memory ◽  
Ti Nanolayer ◽  
Memory Characteristics ◽  
Switching Memory

Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device

2018 ◽  
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Bai Sun ◽  
Xiaoxia Li ◽  
Bolin Guo ◽  
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scholarly journals Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

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Siddheswar Maikap ◽  
Hsien-Chin Chiu ◽  
Ta-Chang Tien ◽  
Chao-Sung Lai
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ti Nanolayer ◽  
Memory Characteristics ◽  
Switching Memory

scholarly journals Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

2013 ◽  
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Author(s):  
Amit Prakash ◽  
Siddheswar Maikap ◽  
Hsien-Chin Chiu ◽  
Ta-Chang Tien ◽  
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Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ti Nanolayer ◽  
Memory Characteristics ◽  
Switching Memory

scholarly journals Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

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Siddheswar Maikap ◽  
Chao-Sung Lai ◽  
Yi-Yan Chen ◽  
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Resistive Switching ◽  
Core Shell ◽  
Resistive Switching Memory ◽  
Memory Characteristics ◽  
Switching Memory
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