Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study
1985 ◽
Vol 22-23
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pp. 369-383
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1996 ◽
Vol 15
(9)
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pp. 803-804
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2020 ◽
Vol 240
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pp. 146935
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1990 ◽
Vol 224
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pp. 21-31
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1990 ◽
Vol 139
(2)
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pp. 453-456
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