Role of target-substrate distance on the growth of CuInSe2 thin films by pulsed laser ablation technique

2016 ◽  
Author(s):  
Kusum Rawat ◽  
Dhruvashi ◽  
P. K. Shishodia
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ablation Technique ◽  
Substrate Distance ◽  
Laser Ablation Technique

Photoluminescent thin films of terbium chloride-doped yttrium oxide deposited by the pulsed laser ablation technique

1997 ◽  
Vol 303 (1-2) ◽  
pp. 76-83 ◽  
Author(s):  
J.C. Alonso ◽  
E. Haro-Poniatowski ◽  
R. Diamant ◽  
M. Fernández-Guasti ◽  
M. García
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Yttrium Oxide ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ablation Technique ◽  
Terbium Chloride ◽  
Laser Ablation Technique

Effect of ZnO doping on the structural and optical properties of BaWO4 thin films prepared using pulsed laser ablation technique

Pramana ◽  
2010 ◽  
Vol 75 (6) ◽  
pp. 1157-1161
Author(s):  
N. Venugopalan Pillai ◽  
R. Vinodkumar ◽  
V. Ganesan ◽  
Peter Koshy ◽  
V. P. Mahadevan Pillai
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Structural And Optical Properties ◽  
Ablation Technique ◽  
Laser Ablation Technique ◽  
Zno Doping

Bismuth induced enhanced green emission from terbium ions and their complex in thin films

2014 ◽  
Vol 43 (28) ◽  
pp. 11014-11018 ◽  
Author(s):  
Gagandeep Kaur ◽  
Brijesh Kumar ◽  
R. K. Verma ◽  
S. B. Rai
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Green Emission ◽  
Pulsed Laser Ablation ◽  
Yag Laser ◽  
Ablation Technique ◽  
Bismuth Nanoparticles ◽  
The Third ◽  
Laser Ablation Technique

Bismuth nanoparticles (NPs) have been prepared by the pulsed laser ablation technique using the third harmonics of a Nd-YAG laser.

Optical and Structural Analysis of GeC Thin Films Deposited by Reactive Pulsed Laser Ablation Technique

2010 ◽  
Vol 442 ◽  
pp. 178-186 ◽  
Author(s):  
H.Z. Shafi ◽  
A. Mahmood ◽  
Z. Ali ◽  
M. Mehmood
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Diagnostic Techniques ◽  
Optical Analysis ◽  
Deposition Parameter ◽  
Force Microscopy ◽  
Ablation Technique ◽  
Laser Ablation Technique

GeC thin films have been prepared by reactive pulsed laser ablation technique. Methane pressure (PCH4) was varied from 0 to 75 milli torrs (mT). Optical analysis of all the samples was performed by spectroscopic ellipsometry (SE). The optical constants i.e. refractive index (n), extinction coefficient (k), absorption coefficient (α) and thickness of deposited film(s) were obtained by modeling and simulations of ellipsometric data. It was found that deposition parameter (change in pressure of methane) has a profound effect on the properties of the deposited films. To support our results of optical analysis, other important diagnostic techniques like atomic force microscopy (AFM), Fourier Transform Infrared Spectroscopy (FTIR) etc. were employed.

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