scholarly journals Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

2016 ◽  
Author(s):  
A. Veroli ◽  
F. Mura ◽  
M. Balucani ◽  
R. Caminiti
Keyword(s):  
Electron Beam ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electron Beam Lithography

scholarly journals Ultrafine and High Aspect Ratio Metal Lines by Electron Beam Lithography for Silicon Solar Cell Metallisation

2012 ◽  
Vol 15 ◽  
pp. 91-96 ◽  
Author(s):  
Baochen Liao ◽  
Armin G. Aberle ◽  
Thomas Mueller ◽  
Lalit K. Verma ◽  
Aaron J. Danner ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cell ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electron Beam Lithography ◽  
Silicon Solar Cell

scholarly journals Single particle dark-field spectroscopy of spherical dimers with down to sub-10 nm gaps fabricated by the annealing of nano-pillars

Nanophotonics ◽  
2018 ◽  
Vol 7 (7) ◽  
pp. 1317-1324 ◽  
Author(s):  
Simon Dickreuter ◽  
Dieter P. Kern ◽  
Monika Fleischer
Keyword(s):  
Electron Beam ◽  
Aspect Ratio ◽  
Single Particle ◽  
High Aspect Ratio ◽  
Electron Beam Lithography ◽  
Longitudinal Mode ◽  
Spherical Shape ◽  
Dark Field ◽  
Field Spectroscopy ◽  
Narrow Gaps

AbstractIn this paper we present a method for the fabrication of plasmonic spherical dimers and oligomers with narrow gaps and tunable distances. High-aspect-ratio nano-pillars are created by the two-step evaporation of gold on structured substrates. By using electron beam lithography, it is possible to control the close spacing of the pillars. Rapid thermal annealing causes the pillars to adopt a spherical shape. Since by melting the spheres gain in diameter compared to the initial nano-pillars, the distance between two adjacent spheres can be reduced to below 10 nm. Dimers with different distances were fabricated and optically characterized by single particle dark-field spectroscopy. The characteristic red-shift of the longitudinal mode due to stronger coupling for smaller distances could be clearly observed and follows a general scaling behavior.

Dense high aspect ratio hydrogen silsesquioxane nanostructures by 100 keV electron beam lithography

2010 ◽  
Vol 21 (28) ◽  
pp. 285305 ◽  
Author(s):  
Joan Vila-Comamala ◽  
Sergey Gorelick ◽  
Vitaliy A Guzenko ◽  
Elina Färm ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Electron Beam ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electron Beam Lithography ◽  
Hydrogen Silsesquioxane
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