MODIFICATION AND ALLOYING EFFECTS IN EUROFER STEEL UNDER POWERFUL PULSED PLASMA IMPACTS

Experimental studies of surface modification of Eurofer samples have been performed with a quasi-stationary plasma accelerator QSPA Kh-50. The heat load on the surface was near the tungsten melting threshold (i.e. about 0.6 MJ/m2). The plasma streams exposures result in modification of steel-based materials and formation of cellular submicron structures in re-solidified layers. Phase characterized by body-centered cubic lattice appeared due to recrystallization of affected material.

Experimental Investigation of the Rapid Fabrication of Micron and Submicron Structures on Polymers Utilizing Ultrasonic Assisted Embossing

Small-scale optical components with micron or submicron features have grown in popularity in recent years. High-quality, high-efficient, and cost-effective processing approaches for polymer optics mass production are an urgent need. In this study, ultrasonic vibration will be introduced in embossing. The major advantage is that the required energy can be provided for process times ranging from a few hundred milliseconds to a few seconds, and that the process energy is provided at exactly the required location so that the structures in the surrounding area are not affected. Due to the strong correlation between electrical impedance and the temperature of the material, a novel impedance-based control strategy has been utilized for precisely controlling ultrasonic vibration during the embossing process. The investigation used two types of stamps with grating line widths of 4 µm and 500 nm, respectively. As a result, an embossing time of less than a few seconds was accomplished and a uniform embossed surface with an average fill rate of more than 75% could be achieved.

Fabrication of Diamond Submicron Lenses and Cylinders by ICP Etching Technique with SiO2 Balls Mask

Submicron lenses and cylinders exhibiting excellent properties in photodetector and quantum applications have been fabricated on a diamond surface by an inductively-coupled plasma (ICP) etching technique. During ICP etching, a layer containing 500 nm diameter balls of SiO2 was employed as mask. By changing the mixing ratio of O2, Ar and CF4 during ICP etching, several submicron structures were fabricated, such as cylinders and lenses. The simulation results demonstrated that such submicron structures on a diamond’s surface can greatly enhance the photon out-coupling efficiency of embedded nitrogen-vacancy center.

Peculiarities of Forming of Microwave Arsenide-Gallium Submicron Structures of Large-scale Integrated Circuit

The peculiarities of technological processes of formation of submicron Schottky field transistors usingarsenide-gallium technology, i.e. the technology of Schottky field transistors formation with a self-alifned gate onthe basis of nitride or silicide of tungsten, are considered in the paper. A highly effective technology for theformation of capsular layers of AlN and BN nitride films by high-frequency magnetron sputtering of the propertarget in nitric plasma for the realization of GaAs-based MOS-transistors is developed.