scholarly journals Self-contained in-vacuum in situ thin film stress measurement tool

2018 ◽  
Vol 89 (5) ◽  
pp. 053904 ◽  
Author(s):  
J. Reinink ◽  
R. W. E. van de Kruijs ◽  
F. Bijkerk
1996 ◽  
Author(s):  
George E. Dovgalenko ◽  
M. S. Haque ◽  
Anatoli Kniazkov ◽  
Yuri I. Onischenko ◽  
Gregory J. Salamo ◽  
...  

1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.


2006 ◽  
Vol 494 (1-2) ◽  
pp. 141-145 ◽  
Author(s):  
S.M.M. Quintero ◽  
W.G. Quirino ◽  
A.L.C. Triques ◽  
L.C.G. Valente ◽  
A.M.B. Braga ◽  
...  

1997 ◽  
Vol 301 (1-2) ◽  
pp. 45-54 ◽  
Author(s):  
S.G Malhotra ◽  
Z.U Rek ◽  
S.M Yalisove ◽  
J.C Bilello

1996 ◽  
Vol 436 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.


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