Measurements Of Stress Evolution During Thin Film Deposition
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AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.
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2010 ◽
Vol 638-642
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pp. 2028-2033
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2004 ◽
Vol 10
(S02)
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pp. 1118-1119
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2000 ◽
Vol 147
(5)
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pp. 1803
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