scholarly journals Measurements Of Stress Evolution During Thin Film Deposition

1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

1996 ◽  
Vol 436 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.


1998 ◽  
Vol 546 ◽  
Author(s):  
P. Zhang ◽  
R. P. Vinci ◽  
J. C. Bravman ◽  
T. W. Kenny

AbstractA new technique of measuring thin film stress with a tunneling sensor is presented. Basic measurement concepts, preliminary results on thin film stress measurement, and fabrication processes for the tunneling stress measurement sensor are described. The feasibility of implementing this technique for in-situ stress monitoring during thin film deposition demonstrated.


2010 ◽  
Vol 638-642 ◽  
pp. 2028-2033
Author(s):  
Seid Jebril ◽  
Yogendra K. Mishra ◽  
Mady Elbahri ◽  
Lorenz Kienle ◽  
Henry Greve ◽  
...  

Thin film stress is often seen as an unwanted effect in micro- and nanostructures. Since recent years, we could employ thin film stress as a useful tool to create nanowires. By creating stress at predetermined breaking points, e.g., in microstructured photo resist thin films, cracks occur on the nanoscale in a well defined and reproducible manner [ ]. By using those as a simple mask for thin film deposition, nanowires can be created. More recently this fabrication scheme could be improved by utilizing delamination of the thin film, in order to obtain suitable shadow masks for thin film deposition in vacuum [ ]. Now, these stress based nanowires can be integrated in microelectronic devices and used as field effect transistors or as hydrogen sensors [ ]. For the functional part of the sensor, it was proposed that thin film stress created by hydrogen adsorption in the nanowire is the driving force. In terms of function, thin films can be also applied on free standing nanoscale whiskers or wires to modify their mechanical features or adding additional functionality. As a second example for the utilization of thin film stress, recent experiments on a piezoelectric and magnetostrictive material combination will be presented. These piezoelectric-magnetostrictive nano-composites are potential candidates for novel magnetic field sensors [ ]. In these composites the magnetostriction will be transferred to the piezoelectric component, resulting in a polarization of the piezoelectric material, that can be used as the sensor signal. The results of two different composite layouts will be presented and discussed with a special focus on the comparison between classical macroscopic composites and the novel nanocomposites.


1998 ◽  
Vol 313-314 ◽  
pp. 511-515 ◽  
Author(s):  
Xiang Gao ◽  
Darin W Glenn ◽  
John A Woollam

2004 ◽  
Vol 10 (S02) ◽  
pp. 1118-1119 ◽  
Author(s):  
Andrew M Minor ◽  
Francis Allen ◽  
Velimir R Radmilovic ◽  
Eric A Stach ◽  
Thomas Schenkel

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


2011 ◽  
Vol 19 (14) ◽  
pp. 12969 ◽  
Author(s):  
Qing-Yuan Cai ◽  
Yu-Xiang Zheng ◽  
Dong-Xu Zhang ◽  
Wei-Jie Lu ◽  
Rong-Jun Zhang ◽  
...  

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