Impact of the degree of Cu–Zn order in Cu2ZnSn(S,Se)4 solar cell absorbers on defect states and band tails

ABSTRACTTo explain realistic circumstances with regard to energy band profiles at the TCO/a-Si:C:H heterojunction, the ASPIN computer simulation has been used. Numerical calculations indicate that the increased interface defect densities result in a steep potential drop inside the interface region, while the rest of the work function difference extends into the p-layer. The detrimental effect of a-Si:C:H partial oxidation has been simulated by additionally increased density of states at a-Si:C:H surface, and its influence on the potential barrier has been analyzed. The impact of both TCO/a-Si:C:H interface states and a-Si:C:H surface states on the photoelectric properties of p-i-n a-Si:H solar cell is discussed, and a possible improvement of Voc is envisaged.

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Limiting effects of conduction band offset and defect states on high efficiency CZTSSe solar cell

Nano Energy ◽

10.1016/j.nanoen.2017.12.031 ◽

2018 ◽

Vol 45 ◽

pp. 75-83 ◽

Cited By ~ 31

Author(s):

SeongYeon Kim ◽

Tanka R. Rana ◽

JunHo Kim ◽

Dae-Ho Son ◽

Kee-Jeong Yang ◽

...

Keyword(s):

Solar Cell ◽

Conduction Band ◽

High Efficiency ◽

Band Offset ◽

Defect States ◽

Conduction Band Offset

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Determination of defect states in P3HT material for solar cell application

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems ◽

10.1109/asdam.2014.6998702 ◽

2014 ◽

Author(s):

P. Juhasz ◽

L. Stuchlikova ◽

M. Micjan ◽

L. Harmatha ◽

J. Jakabovic ◽

...

Keyword(s):

Solar Cell ◽

Defect States ◽

Solar Cell Application

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Illumination Dependence of Microcrystalline PIN Diodes

MRS Proceedings ◽

10.1557/proc-664-a19.6 ◽

2001 ◽

Vol 664 ◽

Cited By ~ 5

Author(s):

Torsten Brammer ◽

Franz Birmans ◽

Mathias Krause ◽

Helmut Stiebig ◽

Heribert Wagner

Keyword(s):

Solar Cell ◽

Ideality Factor ◽

Dark Current ◽

Defect Density ◽

Short Circuit ◽

Forward Bias ◽

Microcrystalline Silicon ◽

Defect States ◽

Solar Cell Performance ◽

Recombination Centers

ABSTRACTNumerical simulations of the current-voltage characteristics of PECVD-microcrystalline silicon based p-i-n diodes were performed to study the affect of defect density and mobility on solar cell performance. Depending on the combination of both parameters the ideality factor increases or decreases with applied forward bias. The reason is the variable contribution of volume recombination to the total diode current and space charge stored in defect states. The decrease in dark current with reduced hydrogen dilution can partly be attributed to a decrease in recombination centers by the same factor as predicted for midgap defect states by the analytic diode theory. Microcrystalline silicon solar cells deposited in the highly crystalline regime (high H-dilution) are limited by recombination of photogenerated carriers and high dark current. Both can be attributed to a large number of recombination centers. The fill factor of our state-of-theart solar cell is limited by the dark current for small illumination intensities, by series resistance for high illumination levels and by both at its maximum under AM1.5 illumination. Short-circuit current and open-circuit voltage pairs measured under intensities from 10-6 to 30 suns reveal a diode characteristic corresponding to an ideality factor of one at large forward bias.

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Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications

Journal of Electrical Engineering ◽

10.2478/jee-2014-0039 ◽

2014 ◽

Vol 65 (4) ◽

pp. 254-258 ◽

Cited By ~ 2

Author(s):

Miroslav Mikolášek ◽

Ján Jakaboviš ◽

Vlastimil Řeháček ◽

Ladislav Harmatha ◽

Robert Andok

Keyword(s):

Solar Cell ◽

Amorphous Silicon ◽

Crystalline Silicon ◽

Amorphous Layer ◽

Band Offset ◽

Defect States ◽

Conduction Band Offset ◽

Silicon Heterojunction Solar Cell ◽

Density Of Defect States ◽

Passivated Silicon

Abstract In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the heterointerface properties of a passivated silicon heterojunction solar cell. It is shown that due to the high density of defect states in the amorphous layer the structure has to be analyzed as a heterojunction. Using the analysis, the following values have been determined: conduction-band offset of 0.13 eV, electron affinity of 3.92 eV, and density of defect states in the intrinsic amorphous silicon being that of 4.14 X 1021m—3.

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