Effects of TCO/a-Si:C:H Interface Defect States on p-i-n a-Si:H Solar Cell Performance

1994 ◽  
Vol 336 ◽  
Author(s):  
Franc Smole ◽  
Marko Topič

ABSTRACTTo explain realistic circumstances with regard to energy band profiles at the TCO/a-Si:C:H heterojunction, the ASPIN computer simulation has been used. Numerical calculations indicate that the increased interface defect densities result in a steep potential drop inside the interface region, while the rest of the work function difference extends into the p-layer. The detrimental effect of a-Si:C:H partial oxidation has been simulated by additionally increased density of states at a-Si:C:H surface, and its influence on the potential barrier has been analyzed. The impact of both TCO/a-Si:C:H interface states and a-Si:C:H surface states on the photoelectric properties of p-i-n a-Si:H solar cell is discussed, and a possible improvement of Voc is envisaged.

2020 ◽  
Vol 13 (5) ◽  
pp. 1481-1491 ◽  
Author(s):  
Sunghyun Kim ◽  
José A. Márquez ◽  
Thomas Unold ◽  
Aron Walsh

An approach is proposed to predict the impact of point defects on solar cell performance.


2019 ◽  
Vol 7 (40) ◽  
pp. 12641-12649 ◽  
Author(s):  
Bin Li ◽  
Qilin Zhang ◽  
Gaole Dai ◽  
Hua Fan ◽  
Xin Yuan ◽  
...  

We performed side-chain fluorination and alkylthio substituent in a template conjugated polymer and further investigate their impact on polymer–polymer solar cell performance.


Small ◽  
2019 ◽  
Vol 15 (9) ◽  
pp. 1804858 ◽  
Author(s):  
Jueming Bing ◽  
Jincheol Kim ◽  
Meng Zhang ◽  
Jianghui Zheng ◽  
Da Seul Lee ◽  
...  

2001 ◽  
Vol 664 ◽  
Author(s):  
Torsten Brammer ◽  
Franz Birmans ◽  
Mathias Krause ◽  
Helmut Stiebig ◽  
Heribert Wagner

ABSTRACTNumerical simulations of the current-voltage characteristics of PECVD-microcrystalline silicon based p-i-n diodes were performed to study the affect of defect density and mobility on solar cell performance. Depending on the combination of both parameters the ideality factor increases or decreases with applied forward bias. The reason is the variable contribution of volume recombination to the total diode current and space charge stored in defect states. The decrease in dark current with reduced hydrogen dilution can partly be attributed to a decrease in recombination centers by the same factor as predicted for midgap defect states by the analytic diode theory. Microcrystalline silicon solar cells deposited in the highly crystalline regime (high H-dilution) are limited by recombination of photogenerated carriers and high dark current. Both can be attributed to a large number of recombination centers. The fill factor of our state-of-theart solar cell is limited by the dark current for small illumination intensities, by series resistance for high illumination levels and by both at its maximum under AM1.5 illumination. Short-circuit current and open-circuit voltage pairs measured under intensities from 10-6 to 30 suns reveal a diode characteristic corresponding to an ideality factor of one at large forward bias.


Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1468
Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Anupama R. Prasad ◽  
Sohaib Naseem Khan ◽  
...  

The numerical modeling of a copper zinc tin sulfide (CZTS)-based kesterite solar cell is described in detail in this article. To model FTO/ZnO/CdS/CZTS/MO structured solar cells, the Solar Cell Capacitance Simulator-one-dimension (SCAPS-1D) program was utilized. Numerical modeling was used to estimate and assess the parameters of various photovoltaic thin film solar cells. The impact of different parameters on solar cell performance and conversion efficiency were explored. Because the response of a solar cell is partly determined by its internal physical mechanism, J-V characteristic characteristics are insufficient to define a device’s behavior. Regardless of the conviction in solar cell modeling, variable attributes as well as many probable conditions must be handled for simulation. Promising optimized results were obtained with a conversion efficiency of (η% = 25.72%), a fill factor of (FF% = 83.75%), a short-circuit current of (JSC  = 32.96436 mA/cm2), and an open-circuit voltage of (VOC = 0.64 V). The findings will aid in determining the feasibility of manufacturing high-efficiency CZTS-based solar cells. First, in the SCAPS-1D environment, the impacts of experimentally constructed CZTS solar cells were simulated. The experimental data was then compared to the simulated results from SCAPS-1D. After optimizing cell parameters, the conversion efficiency of the improved system was observed to rise. The influence of system factors, such as the thickness, acceptor, and donor carrier concentration densities of the absorber and electron transport layers, and the effect of temperature on the efficiency of CZTS-based photovoltaic cells, was explored using one-dimensional SCAPS-1D software. The suggested findings will be extremely useful to engineers and researchers in determining the best method for maximizing solar cell efficiency, as well as in the development of more efficient CZTS-based solar cells.


2013 ◽  
Vol 23 (45) ◽  
pp. 5655-5662 ◽  
Author(s):  
Fiona H. Scholes ◽  
Tino Ehlig ◽  
Michael James ◽  
Kwan H. Lee ◽  
Noel Duffy ◽  
...  

2017 ◽  
Vol 139 (40) ◽  
pp. 14109-14119 ◽  
Author(s):  
Wenhan He ◽  
Maksim Y. Livshits ◽  
Diane A. Dickie ◽  
Zhen Zhang ◽  
Luis E. Mejiaortega ◽  
...  

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