scholarly journals Femtosecond pulsed laser deposited Er3+-doped zinc-sodium tellurite glass on Si: Thin-film structural and photoluminescence properties

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085324 ◽  
Author(s):  
Thomas Mann ◽  
Billy Richards ◽  
Eric Kumi-Barimah ◽  
Robert Mathieson ◽  
Matthew Murray ◽  
...  
Keyword(s):  
Thin Film ◽  
Tellurite Glass ◽  
Pulsed Laser ◽  
Photoluminescence Properties ◽  
Sodium Tellurite ◽  
Si Thin Film ◽  
Femtosecond Pulsed Laser

Femtosecond pulsed laser ablation of molybdenum carbide: Nanoparticles and thin film characteristics

2013 ◽  
Vol 278 ◽  
pp. 321-324 ◽  
Author(s):  
A. De Bonis ◽  
A. Santagata ◽  
M. Sansone ◽  
J.V. Rau ◽  
T. Mori ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Molybdenum Carbide ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Film Characteristics ◽  
Femtosecond Pulsed Laser

scholarly journals Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures

2018 ◽  
Vol 125 (1) ◽  
Author(s):  
K. S. Albarkaty ◽  
E. Kumi-Barimah ◽  
C. Craig ◽  
D. Hewak ◽  
G. Jose ◽  
...  
Keyword(s):  
Thin Film ◽  
Chalcogenide Glass ◽  
Pulsed Laser ◽  
Erbium Doped ◽  
Femtosecond Pulsed Laser

Preparation and Electrical Property of Mg2Si Thin Film by Pulsed Laser Deposition

2014 ◽  
Vol 1058 ◽  
pp. 244-247 ◽  
Author(s):  
Mei Jun Yang
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Temperature Range ◽  
Type Semiconductor ◽  
Annealing Procedure ◽  
Si Thin Film

Mg2Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg2Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg2Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg2Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg2Si thin film were detected. The results showed that the maximal resistivity of Mg2Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg2Si thin film as n-type semiconductor.

Modeling of Cathodoluminescence and Photoluminescence Properties of Pulsed Laser-Deposited Europium-Activated Yttrium Oxide Thin Film Phosphors

1999 ◽  
Vol 558 ◽  
Author(s):  
K.G. Cho ◽  
D. Kumar ◽  
Z. Chen ◽  
P. H. Holloway ◽  
R. K. Singh
Keyword(s):  
Thin Film ◽  
Yttrium Oxide ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Oxide Thin Film ◽  
Photoluminescence Properties ◽  
Sapphire Substrates ◽  
Phosphor Film ◽  
Film Roughness ◽  
Substrate Surfaces

ABSTRACTEuropium-activated yttrium oxide (Eu:Y2O3) thin films were deposited on (100) silicon and (0001) sapphire substrates using 248 nm KrF pulsed laser. To investigate the effect of the Eu:Y2O3 film roughness on cathodoluminescence (CL) and photoluminescence (PL) properties, the substrate surfaces with various roughnesses were used. The roughness was found to play an important role in determining CL and PL brightness of the Eu:Y2O3 films. The improvement in brightness by increasing the film roughness is due to increase in total portion of light that escapes from the surface of the phosphor film. A model has been proposed which supports strongly this explanation. Our results show that depositions with slower growth rate and lower laser energy are more important parameters than increasing the roughness to improve CL brightness of the Eu:Y2O3 thin film phosphors.

Fabrication of nanostructured Al2CuMg thin film by femtosecond pulsed laser ablation

2004 ◽  
Vol 458 (1-2) ◽  
pp. 37-42 ◽  
Author(s):  
M. Jaime Vasquez ◽  
G.P. Halada ◽  
C.R. Clayton ◽  
P.I. Gouma
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Femtosecond Pulsed Laser
Sign in / Sign up

Export Citation Format

Share Document