scholarly journals Controlling domain configuration of the sensing layer for magnetic tunneling junctions by using exchange bias

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025119 ◽  
Author(s):  
Sina Ranjbar ◽  
Muftah Al-Mahdawi ◽  
Mikihiko Oogane ◽  
Yasuo Ando
Keyword(s):  
Exchange Bias ◽  
Domain Configuration ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

scholarly journals Low potential barrier height effects in magnetic tunneling junctions

2007 ◽  
Vol 76 (21) ◽  
Author(s):  
E. S. Cruz de Gracia ◽  
L. S. Dorneles ◽  
L. F. Schelp ◽  
S. R. Teixeira ◽  
M. N. Baibich
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Potential Barrier Height ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

Failure of exchange-biased low resistance magnetic tunneling junctions upon thermal treatment

2002 ◽  
Vol 91 (1) ◽  
pp. 217 ◽  
Author(s):  
J. H. Lee ◽  
H. D. Jeong ◽  
H. Kyung ◽  
C. S. Yoon ◽  
C. K. Kim ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Low Resistance ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers

Nanoscale ◽  
2018 ◽  
Vol 10 (47) ◽  
pp. 22196-22202 ◽  
Author(s):  
Longfei Pan ◽  
Le Huang ◽  
Mianzeng Zhong ◽  
Xiang-Wei Jiang ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Tunneling Magnetoresistance ◽  
Two Dimensional ◽  
Tunneling Junctions ◽  
Magnetic Tunneling Junctions ◽  
Magnetic Tunneling

The large tunneling magnetoresistance (TMR) effect was observed in magnetic tunneling junctions (MTJs), which have atomic thickness because of the use of two-dimensional ferromagnetic CrX3 (X = Br, I) monolayers.

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