tunneling magnetoresistance
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2022 ◽  
Vol 27 (3) ◽  
pp. 443-454
Author(s):  
Shaohua Yan ◽  
Zitong Zhou ◽  
Yaodi Yang ◽  
Qunwen Leng ◽  
Weisheng Zhao

Author(s):  
Hailin Yu ◽  
Zhengguang Shao ◽  
Yongmei Tao ◽  
Xuefan Jiang ◽  
Yaojun Dong ◽  
...  

Magnetic tunnel junctions (MTJs) have attained new opportunities due to the emergence of two-dimensional (2D) magnetic materials after it has been proposed more than forty years. Here, an in-plane double...


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ding-Fu Shao ◽  
Shu-Hui Zhang ◽  
Ming Li ◽  
Chang-Beom Eom ◽  
Evgeny Y. Tsymbal

AbstractElectric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation, spin-independent conductance in compensated antiferromagnets and normal metals can be efficiently exploited in spintronics, provided their magnetic space group symmetry supports a non-spin-degenerate Fermi surface. Due to their momentum-dependent spin polarization, such antiferromagnets can be used as active elements in antiferromagnetic tunnel junctions (AFMTJs) and produce a giant tunneling magnetoresistance (TMR) effect. Using RuO2 as a representative compensated antiferromagnet exhibiting spin-independent conductance along the [001] direction but a non-spin-degenerate Fermi surface, we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globally spin-neutral charge current is controlled by the relative orientation of the Néel vectors of the two RuO2 electrodes, resulting in the TMR effect as large as ~500%. These results are expanded to normal metals which can be used as a counter electrode in AFMTJs with a single antiferromagnetic layer or other elements in spintronic devices. Our work uncovers an unexplored potential of the materials with no global spin polarization for utilizing them in spintronics.


Author(s):  
Anqi Chen ◽  
Xiangyu Li ◽  
Yan Li ◽  
Xinpeng Di ◽  
Xiaowei Liu

The tunneling magnetoresistance (TMR) with high-resolution digital output is widely used in military and civil fields. In this work we proposed a low-noise read-out circuit and a four-order fully differential sigma-delta modulator for TMR sensors. In the read-out circuit, we used symmetrical cascade for good matching. We used correlated double sampling (CDS) technique to improve the conversion accuracy of the modulator. In switched capacitor circuits we used time-division multiplexing to suppress charge injection and clock feedthrough. The high-precision application specific integrated circuit (ASIC) chip was fabricated by a 0.35 [Formula: see text]m CMOS process from Shanghai Huahong foundry. The TMR sensor was placed in an environment of three-layer magnetic shielding for test. The active area of the ASIC is only about [Formula: see text]. At a sampling frequency of 20 kHz, the TMR magnetometer consumes 77 mW from a single 5 V supply; the sigma-delta modulator for TMR can achieve an average noise floor of −141 dBV. The magnetometer works at a full scale (FS) of [Formula: see text], it can achieve a nonlinearity of 0.2% FS and a resolution of 0.15 nT/Hz[Formula: see text] over a signal bandwidth.


Author(s):  
Mongkol Kongtunmon ◽  
Laddawan Supadee ◽  
Worasom Kundhikanjana ◽  
Pattanaphong Janphuang ◽  
Ratchadaporn Supruangnet ◽  
...  

2021 ◽  
pp. 2104658
Author(s):  
Wenkai Zhu ◽  
Hailong Lin ◽  
Faguang Yan ◽  
Ce Hu ◽  
Ziao Wang ◽  
...  

2021 ◽  
Vol 130 (3) ◽  
pp. 033901
Author(s):  
Dhritiman Bhattacharya ◽  
Peng Sheng ◽  
Md Ahsanul Abeed ◽  
Zhengyang Zhao ◽  
Hongshi Li ◽  
...  

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
D. J. P. de Sousa ◽  
C. O. Ascencio ◽  
P. M. Haney ◽  
J. P. Wang ◽  
Tony Low

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