Coexistence of two charge density waves of different symmetry in transition metal dichalcogenide 4Hb‐TaS2

1976 ◽  
Vol 29 (4) ◽  
pp. 223-224 ◽  
Author(s):  
J. Narayan
2018 ◽  
Vol 47 (46) ◽  
pp. 16509-16515 ◽  
Author(s):  
Guo-Jiun Shu ◽  
Sz-Chian Liou ◽  
Chih-Kai Lin ◽  
Michitoshi Hayashi ◽  
Fang-Cheng Chou

Based on the atomic electronic configuration and Ti–Se coordination, a valence bond model for the layered transition metal dichalcogenide (TMDC) 1T-TiSe2 is proposed.


Nanoscale ◽  
2019 ◽  
Vol 11 (46) ◽  
pp. 22351-22358 ◽  
Author(s):  
Adina Luican-Mayer ◽  
Yuan Zhang ◽  
Andrew DiLullo ◽  
Yang Li ◽  
Brandon Fisher ◽  
...  

Charge density waves and negative differential resistance are seemingly unconnected physical phenomena but they coexist after a voltage pulse manipulation on TaS2 surface with an STM tip.


1991 ◽  
Vol 230 ◽  
Author(s):  
Toshihiro Shimada ◽  
Fumio S. Ohuchi ◽  
Bruce A. Parkinson

AbstractWe report an epitaxial growth of TaSe2, a family of transition metal dichalcogenides that exhibit Charge Density Waves (CDW). The films that have been characterized with RHEED, LEED, XPS and STM showed two different phases. Occurrence of CDW in the ultrathin films has been detected by XPS and LEED.


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