Erratum: Four‐wave polarization spectroscopy of small‐gap semiconductors: Application to free carrier concentration measurements in gallium arsenide using a tunable infrared source

1981 ◽  
Vol 39 (2) ◽  
pp. 183-183
Author(s):  
Ph. Kupecek ◽  
M. Comte ◽  
D. S. Chemla
Keyword(s):  
Gallium Arsenide ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Wave Polarization ◽  
Infrared Source ◽  
Polarization Spectroscopy ◽  
Concentration Measurements

Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

2011 ◽  
Vol 99 (7) ◽  
pp. 071902 ◽  
Author(s):  
M. Nazari ◽  
Changhong Chen ◽  
A. A. Bernussi ◽  
Z. Y. Fan ◽  
M. Holtz
Keyword(s):  
Phase Transition ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Vibrational Properties

scholarly journals Low 1014  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD

APL Materials ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 021110 ◽  
Author(s):  
Fikadu Alema ◽  
Yuewei Zhang ◽  
Andrei Osinsky ◽  
Nazar Orishchin ◽  
Nicholas Valente ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration
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