Raman scattering determination of free‐carrier concentration and surface space‐charge layer in 〈100〉n‐GaAs

1985 ◽  
Vol 47 (8) ◽  
pp. 891-893 ◽  
Author(s):  
H. Shen ◽  
Fred H. Pollak ◽  
R. N. Sacks
1995 ◽  
Vol 78 (4) ◽  
pp. 2515-2519 ◽  
Author(s):  
K. Sinha ◽  
A. Mascarenhas ◽  
Sarah R. Kurtz ◽  
J. M. Olson

1996 ◽  
Vol 449 ◽  
Author(s):  
F. A. Ponce ◽  
J. W. Steeds ◽  
C. D. Dyer ◽  
G. D. Pitt

ABSTRACTRaman scattering experiments on silicon-doped GaN show that donor impurities quench the Al(LO) Raman line at 735 cm−1. This is due to interaction between lattice vibrations and the free carrier plasma. The spatial variation of the Al(LO) signal has been imaged directly using newly developed instrumentation. Features with dimension under on micron are observed in faceted GaN crystallites. The variation in free carrier concentration is attributed to preferential incorporation of donor impurities during growth.


2008 ◽  
Vol 34 (1) ◽  
pp. 37-39 ◽  
Author(s):  
O. S. Komkov ◽  
A. N. Pikhtin ◽  
Yu. V. Zhilyaev ◽  
L. M. Fedorov

2014 ◽  
Vol 16 (9) ◽  
pp. 094010 ◽  
Author(s):  
Eugenio Calandrini ◽  
Michele Ortolani ◽  
Alessandro Nucara ◽  
Giordano Scappucci ◽  
Wolfgang M Klesse ◽  
...  

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