Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb

1986 ◽  
Vol 48 (5) ◽  
pp. 315-317 ◽  
Author(s):  
J. P. van der Ziel ◽  
T. H. Chiu ◽  
W. T. Tsang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Double Heterostructures ◽  
Optically Pumped Laser

Optically pumped laser action at 77 K in GaAs/GaInP double heterostructures grown by molecular beam epitaxy

1980 ◽  
Vol 37 (1) ◽  
pp. 30-32 ◽  
Author(s):  
G. B. Scott ◽  
J. S. Roberts ◽  
R. F. Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Action ◽  
Optically Pumped ◽  
Double Heterostructures ◽  
Optically Pumped Laser

Optically pumped laser oscillation in the 1.6–1.8 μm region from Al0.4Ga0.6Sb/GaSb/Al0.4Ga0.6Sb double heterostructures grown by molecular beam heteroepitaxy on Si

1986 ◽  
Vol 48 (7) ◽  
pp. 454-456 ◽  
Author(s):  
J. P. van der Ziel ◽  
R. J. Malik ◽  
J. F. Walker ◽  
R. M. Mikulyak
Keyword(s):  
Molecular Beam ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Double Heterostructures ◽  
Optically Pumped Laser

Optically pumped laser oscillation at 3.82 μm from InAs1−xSbxgrown by molecular beam epitaxy on GaSb

1985 ◽  
Vol 47 (11) ◽  
pp. 1139-1141 ◽  
Author(s):  
J. P. van der Ziel ◽  
T. H. Chiu ◽  
W. T. Tsang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Optically Pumped Laser

Optically pumped laser oscillation from GaSb/Al0.4Ga0.6Sb grown by molecular beam heteroepitaxy on Si

1986 ◽  
Author(s):  
J. P. Van Der Ziel ◽  
R. J. Malik ◽  
J. F. Walker ◽  
R. M. Mikulyak
Keyword(s):  
Molecular Beam ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Optically Pumped Laser

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

1983 ◽  
Vol 43 (6) ◽  
pp. 569-571 ◽  
Author(s):  
C. W. Tu ◽  
S. R. Forrest ◽  
W. D. Johnston
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Double Heterostructures

Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Absorption Coefficients ◽  
Excitonic Absorption ◽  
Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

Laser oscillation with optically pumped very thin GaAs‐AlxGa1−xAs multilayer structures and conventional double heterostructures

1976 ◽  
Vol 47 (10) ◽  
pp. 4509-4517 ◽  
Author(s):  
R. C. Miller ◽  
R. Dingle ◽  
A. C. Gossard ◽  
R. A. Logan ◽  
W. A. Nordland ◽  
...  
Keyword(s):  
Multilayer Structures ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Double Heterostructures
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