Room‐temperature optically pumped laser oscillation at 2.07 μm from Ga0.85In0.15As0.13Sb0.87/ Al0.4Ga0.6As0.035Sb0.965double heterostructures grown by molecular‐beam epitaxy on GaSb substrates

1986 ◽  
Vol 60 (12) ◽  
pp. 4087-4089 ◽  
Author(s):  
J. P. van der Ziel ◽  
T. H. Chiu ◽  
W. T. Tsang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Optically Pumped Laser

Optically pumped laser oscillation at 3.82 μm from InAs1−xSbxgrown by molecular beam epitaxy on GaSb

1985 ◽  
Vol 47 (11) ◽  
pp. 1139-1141 ◽  
Author(s):  
J. P. van der Ziel ◽  
T. H. Chiu ◽  
W. T. Tsang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Optically Pumped Laser

Optically pumped laser action at 77 K in GaAs/GaInP double heterostructures grown by molecular beam epitaxy

1980 ◽  
Vol 37 (1) ◽  
pp. 30-32 ◽  
Author(s):  
G. B. Scott ◽  
J. S. Roberts ◽  
R. F. Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Action ◽  
Optically Pumped ◽  
Double Heterostructures ◽  
Optically Pumped Laser

Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Absorption Coefficients ◽  
Excitonic Absorption ◽  
Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

Optically pumped laser oscillation in the 1.6–1.8 μm region from Al0.4Ga0.6Sb/GaSb/Al0.4Ga0.6Sb double heterostructures grown by molecular beam heteroepitaxy on Si

1986 ◽  
Vol 48 (7) ◽  
pp. 454-456 ◽  
Author(s):  
J. P. van der Ziel ◽  
R. J. Malik ◽  
J. F. Walker ◽  
R. M. Mikulyak
Keyword(s):  
Molecular Beam ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Double Heterostructures ◽  
Optically Pumped Laser

Optically Pumped Blue-Green Laser Operation Above Room-Temperature in Zn0.80Cd0.20Se-ZnS0.08Se0.92Multiple Quantum Well Structures Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L605-L607 ◽  
Author(s):  
Yoichi Kawakami ◽  
Shigeo Yamaguchi ◽  
Yi-hong Wu ◽  
Kunio Ichino ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Green Laser ◽  
Laser Operation ◽  
Optically Pumped ◽  
Quantum Well Structures ◽  
Metalorganic Molecular Beam Epitaxy

Optically pumped laser oscillation from GaSb/Al0.4Ga0.6Sb grown by molecular beam heteroepitaxy on Si

1986 ◽  
Author(s):  
J. P. Van Der Ziel ◽  
R. J. Malik ◽  
J. F. Walker ◽  
R. M. Mikulyak
Keyword(s):  
Molecular Beam ◽  
Laser Oscillation ◽  
Optically Pumped ◽  
Optically Pumped Laser

Room-temperature ferromagnetism in (Mn, N)-codoped TiO2 films grown by plasma assisted molecular beam epitaxy

2008 ◽  
Vol 104 (9) ◽  
pp. 093914 ◽  
Author(s):  
X. Y. Li ◽  
S. X. Wu ◽  
L. M. Xu ◽  
Y. J. Liu ◽  
X. J. Xing ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Tio2 Films ◽  
Codoped Tio2

Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2907-2916 ◽  
Author(s):  
Shulong Lu ◽  
Shiro Uchida
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Molecular Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

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