scholarly journals Atomic structures and nanoscale electronic states on the surface of MgB2 superconductor observed by scanning tunneling microscopy and spectroscopy

2019 ◽  
Vol 45 (11) ◽  
pp. 1209-1217
Author(s):  
Akira Sugimoto ◽  
Yuta Yanase ◽  
Toshikazu Ekino ◽  
Takahiro Muranaka ◽  
Alexander M. Gabovich
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic States ◽  
Scanning Tunneling ◽  
Mgb2 Superconductor ◽  
Tunneling Microscopy ◽  
Atomic Structures

Influence of asymmetric adsorption on electronic states of molecule studied by scanning tunneling microscopy and spectroscopy

2009 ◽  
Vol 474 (1-3) ◽  
pp. 132-136 ◽  
Author(s):  
YiBao Li ◽  
JunHua Wan ◽  
Guicun Qi ◽  
Ke Deng ◽  
Yanlian Yang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic States ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Ultra High Vacuum Scanning Tunneling Microscopy Observation of Multilayer Step Structure on GaAs and AlAs Vicinal Surface Grown by Metalorganic Vapor Phase Epitaxy

1996 ◽  
Vol 448 ◽  
Author(s):  
Jun-Ya Ishizaki ◽  
Yasuhiko Ishizaki ◽  
Takashi Fukui
Keyword(s):  
Scanning Tunneling Microscopy ◽  
High Vacuum ◽  
Gaas Layer ◽  
Layer Growth ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Vicinal Surface ◽  
Microscopy Observation ◽  
Tunneling Microscopy ◽  
Atomic Structures

AbstractWe observe the atomic structures at the multilayer step region on MOVPE-grown GaAs (001) vicinal surface using ultra high vacuum scanning tunneling microscopy (UHV-STM), and clarify that (4×2) or (4×3) like reconstruction units are dominant. Oxide free AlAs surfaces grown on GaAs vicinal surface are also successfully observed by UHV-STM. The reconstruction units at the multilayer step region on AlAs surface have the same units on GaAs vicinal surface. GaAs surface has the lack of dimmer rows on the terrace region just below the multilayer step region, while AlAs surface has dimmer rows even on the terrace just below the multilayer step region. GaAs layer growth leads tothe step bunching phenomenon and AlAs surface leads to the step debunching phenomenon.

Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy

2004 ◽  
Vol 69 (12) ◽  
Author(s):  
Taisuke Ohta ◽  
Andreas Klust ◽  
Jonathan A. Adams ◽  
Qiuming Yu ◽  
Marjorie A. Olmstead ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Atomic Structures
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