Variation of Electronic States in Mesoscopic Scale Structures of TiO2(110) Surface Observed by Scanning Tunneling Microscopy/Spectroscopy

1999 ◽  
Vol 38 (Part 1, No. 6B) ◽  
pp. 3826-3829 ◽  
Author(s):  
Yoshiyuki Sakai ◽  
Shaw Ehara
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic States ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Mesoscopic Scale ◽  
Scale Structures

Influence of asymmetric adsorption on electronic states of molecule studied by scanning tunneling microscopy and spectroscopy

2009 ◽  
Vol 474 (1-3) ◽  
pp. 132-136 ◽  
Author(s):  
YiBao Li ◽  
JunHua Wan ◽  
Guicun Qi ◽  
Ke Deng ◽  
Yanlian Yang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic States ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND MACROSCOPIC ELECTRICAL PROPERTIES OF METAL-COVERED Si(111) SURFACES

1993 ◽  
Vol 07 (22) ◽  
pp. 3817-3876 ◽  
Author(s):  
SHUJI HASEGAWA ◽  
SHOZO INO
Keyword(s):  
Electrical Properties ◽  
Electronic States ◽  
High Energy ◽  
Schottky Barriers ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Surface Conductance ◽  
Tunneling Microscopy ◽  
Band Bending ◽  
Scale Structures

In this review, we discuss the relation between the atomic-scale structures (atomic arrangements and electronic states) and the macroscopic electrical properties (surface conductance and Schottky barriers) of metal(Ag, Au, or In)-covered Si (111) surfaces. These surfaces have been one of the most intensively investigated systems with the use of a variety of modern surface science techniques, and diversified information at atomic scales has been obtained. The data of reflection high-energy electron diffraction, scanning tunneling microscopy/spectroscopy, photoemission spectroscopies, and others are utilized here for characterizing the structures. Surface conductance and Schottky barriers, on the other hand, have also been the major areas in semiconductor physics for, especially device-oriented, research, but these have rarely been studied in combination with atomic-scale structures. These electrical properties have recently been found to be crucially dependent on the local atomic structures of well-defined surfaces/interfaces. The atomic arrangements and the resulting surface/interface electronic states govern the Fermi-level pinning and band bending which determine the electrical properties of semiconductor surfaces/interfaces.

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