Effect of polarization field and Auger recombination on efficiency droop in AlGaN/GaN ultraviolet LED

2020 ◽  
Author(s):  
Priyanka Sahare ◽  
Bijay Kumar Sahoo
Keyword(s):  
Auger Recombination ◽  
Efficiency Droop ◽  
Polarization Field

Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs

2010 ◽  
Vol 47 (1) ◽  
pp. 118-122 ◽  
Author(s):  
Xing Li ◽  
Huiyong Liu ◽  
X. Ni ◽  
Ümit Özgür ◽  
Hadis Morkoç
Keyword(s):  
Auger Recombination ◽  
Efficiency Droop

scholarly journals Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

2020 ◽  
Vol 116 (22) ◽  
pp. 222106 ◽  
Author(s):  
W. Liu ◽  
C. Haller ◽  
Y. Chen ◽  
T. Weatherley ◽  
J.-F. Carlin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Efficiency Droop ◽  
Single Quantum ◽  
Single Quantum Well

Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs

2021 ◽  
Vol 42 (07) ◽  
pp. 897-903
Author(s):  
Wei-dong WANG ◽  
◽  
Chun-shuang CHU ◽  
Dan-yang ZHANG ◽  
Wen-gang BI ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Electron Leakage

scholarly journals Degradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes

AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015005 ◽  
Author(s):  
Muhammad Usman ◽  
Kiran Saba ◽  
Dong-Pyo Han ◽  
Nazeer Muhammad ◽  
Shabieh Farwa ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Polarization Field ◽  
Light Emitting ◽  
Degradation Effect

EFFICIENCY DROOP IN GaInN HIGH-POWER LIGHT-EMITTING DIODES

2011 ◽  
Vol 20 (02) ◽  
pp. 247-265 ◽  
Author(s):  
MARTIN F. SCHUBERT ◽  
JONG KYU KIM
Keyword(s):  
Active Region ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Light Emitting ◽  
High Drive ◽  
Device Structures ◽  
Substantial Effort

GaN -based light-emitting diodes suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents. This phenomenon, known as "efficiency droop," is a major problem for solid-state lighting applications, in which light-emitting diodes are driven at high currents to deliver large optical powers. Although substantial effort has been invested to uncover the physical origin and mitigate the effects of efficiency droop, there is still a lack of consensus on the dominant mechanism responsible. In this article, we review several mechanisms that have been proposed as explanations of efficiency droop, including junction heating, carrier delocalization, Auger recombination, and electron leakage from the active region. In addition, device structures intended to mitigate the droop-causing mechanism – (i) thick quantum wellsl, (ii) enhanced hole-injection efficiency structures, and (iii) polarization-matched active region – are discussed.

scholarly journals Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures

2016 ◽  
Vol 24 (3) ◽  
pp. 2971 ◽  
Author(s):  
Anna Nirschl ◽  
Michael Binder ◽  
Marina Schmid ◽  
Ines Pietzonka ◽  
Hans-Jürgen Lugauer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Efficiency Droop ◽  
Quantum Well Structures
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