Impact of Auger Recombination, Electron Leakage and Hole Injection on Efficiency Droop for DUV LEDs

2021 ◽  
Vol 42 (07) ◽  
pp. 897-903
Author(s):  
Wei-dong WANG ◽  
◽  
Chun-shuang CHU ◽  
Dan-yang ZHANG ◽  
Wen-gang BI ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Electron Leakage

EFFICIENCY DROOP IN GaInN HIGH-POWER LIGHT-EMITTING DIODES

2011 ◽  
Vol 20 (02) ◽  
pp. 247-265 ◽  
Author(s):  
MARTIN F. SCHUBERT ◽  
JONG KYU KIM
Keyword(s):  
Active Region ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Light Emitting ◽  
High Drive ◽  
Device Structures ◽  
Substantial Effort

GaN -based light-emitting diodes suffer from high-current loss mechanisms that lead to a significant decrease in internal quantum efficiency at high drive currents. This phenomenon, known as "efficiency droop," is a major problem for solid-state lighting applications, in which light-emitting diodes are driven at high currents to deliver large optical powers. Although substantial effort has been invested to uncover the physical origin and mitigate the effects of efficiency droop, there is still a lack of consensus on the dominant mechanism responsible. In this article, we review several mechanisms that have been proposed as explanations of efficiency droop, including junction heating, carrier delocalization, Auger recombination, and electron leakage from the active region. In addition, device structures intended to mitigate the droop-causing mechanism – (i) thick quantum wellsl, (ii) enhanced hole-injection efficiency structures, and (iii) polarization-matched active region – are discussed.

Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers

2021 ◽  
Vol 130 (18) ◽  
pp. 183104
Author(s):  
Liwen Cheng ◽  
Jiayi Zhang ◽  
Jundi Wang ◽  
Jun Zhang ◽  
Jinpeng Yang ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Optical Field ◽  
Hole Injection ◽  
Electron Leakage

Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs

2010 ◽  
Vol 47 (1) ◽  
pp. 118-122 ◽  
Author(s):  
Xing Li ◽  
Huiyong Liu ◽  
X. Ni ◽  
Ümit Özgür ◽  
Hadis Morkoç
Keyword(s):  
Auger Recombination ◽  
Efficiency Droop

scholarly journals Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop

2011 ◽  
Vol 99 (18) ◽  
pp. 181115 ◽  
Author(s):  
Sunyong Hwang ◽  
Woo Jin Ha ◽  
Jong Kyu Kim ◽  
Jiuru Xu ◽  
Jaehee Cho ◽  
...  
Keyword(s):  
Efficiency Droop ◽  
Hole Injection ◽  
Light Emitting

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

2010 ◽  
Vol 97 (26) ◽  
pp. 261103 ◽  
Author(s):  
C. H. Wang ◽  
C. C. Ke ◽  
C. Y. Lee ◽  
S. P. Chang ◽  
W. T. Chang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

scholarly journals Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

2020 ◽  
Vol 116 (22) ◽  
pp. 222106 ◽  
Author(s):  
W. Liu ◽  
C. Haller ◽  
Y. Chen ◽  
T. Weatherley ◽  
J.-F. Carlin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Efficiency Droop ◽  
Single Quantum ◽  
Single Quantum Well

Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes

2011 ◽  
Vol 4 (1) ◽  
pp. 012106 ◽  
Author(s):  
Liann-Be Chang ◽  
Mu-Jen Lai ◽  
Ray-Ming Lin ◽  
Chou-Hsiung Huang
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Electron Leakage
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