First- and third-order shear nonlinearities across the structural relaxation peak of the deeply supercooled pharmaceutical liquid indomethacin

2021 ◽  
Vol 155 (13) ◽  
pp. 134901
Author(s):  
Kevin Moch ◽  
S. Peter Bierwirth ◽  
Catalin Gainaru ◽  
Roland Böhmer
Keyword(s):  
Structural Relaxation ◽  
Relaxation Peak ◽  
Third Order

scholarly journals First-Principles Study on the Elastic Constants and Structural and Mechanical Properties of 30° Partial Dislocation in GaAs

2021 ◽  
Vol 2021 ◽  
pp. 1-7
Author(s):  
Huili Zhang ◽  
Qiannan Gao ◽  
Defang Lu ◽  
Yunchang Fu ◽  
Lumei Tong
Keyword(s):  
Elastic Constants ◽  
Structural Relaxation ◽  
First Principles ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Peierls Stress ◽  
Experimental Result ◽  
Third Order ◽  
Generalized Stacking Fault ◽  
Generalized Stacking Fault Energy

The second-order elastic constants, third-order elastic constants, and the generalized-stacking-fault energy for semiconductor GaAs are investigated using the first-principles calculations. The predictions of elastic constants are obtained from the coefficients of the fitted polynomials of the energy-strain functions. It is found that the nonlinear elastic effects must be considered when the applied deformations are larger than approximately 1.5%. With the Lagrangian strains up to 6.4%, the terms included up to third order in energy expansion functions are sufficient. The elastic constants given in this work agree well with the previous results and experimental data except for C144. C144 given by the present paper is a positive value, and the estimated 3 GPa agrees well with the experimental result of 2 GPa. The research results can provide a reference for understanding the elasticity of GaAs. The generalized-stacking-fault energy has been calculated without and with structural relaxation, respectively. The unstable stacking fault energy with structural relaxation is about two-thirds of that without relaxation. The dislocation width and Peierls stress for 30° partial in GaAs have been investigated based on the improved P-N theory. The dislocation width is very narrow (only about one-fifth of Burgers vector b), which is reasonable for covalent materials. The Peierls stress is about 4 GPa, in good agreement with the experimental result of 2∼3 GPa.

Probe size and 5th-order aberration

1987 ◽  
Vol 45 ◽  
pp. 134-135 ◽  
Author(s):  
Zhifeng Shao
Keyword(s):  
Electron Probe ◽  
Spherical Aberration ◽  
Wave Length ◽  
Cylindrical Symmetry ◽  
Electron Wave ◽  
Third Order ◽  
The Third ◽  
Probe Radius ◽  
Small Probe ◽  
Probe Size

A small electron probe has many applications in many fields and in the case of the STEM, the probe size essentially determines the ultimate resolution. However, there are many difficulties in obtaining a very small probe.Spherical aberration is one of them and all existing probe forming systems have non-zero spherical aberration. The ultimate probe radius is given byδ = 0.43Csl/4ƛ3/4where ƛ is the electron wave length and it is apparent that δ decreases only slowly with decreasing Cs. Scherzer pointed out that the third order aberration coefficient always has the same sign regardless of the field distribution, provided only that the fields have cylindrical symmetry, are independent of time and no space charge is present. To overcome this problem, he proposed a corrector consisting of octupoles and quadrupoles.

Children’s Recall of Approximations to English

1973 ◽  
Vol 16 (2) ◽  
pp. 201-212 ◽  
Author(s):  
Elizabeth Carrow ◽  
Michael Mauldin
Keyword(s):  
Language Development ◽  
Fourth Order ◽  
Third Order ◽  
Memory Processes ◽  
The Third ◽  
General Index ◽  
General Linguistic

As a general index of language development, the recall of first through fourth order approximations to English was examined in four, five, six, and seven year olds and adults. Data suggested that recall improved with age, and increases in approximation to English were accompanied by increases in recall for six and seven year olds and adults. Recall improved for four and five year olds through the third order but declined at the fourth. The latter finding was attributed to deficits in semantic structures and memory processes in four and five year olds. The former finding was interpreted as an index of the development of general linguistic processes.

The influence of third-order interactions on the density profile of associating hard spheres

1997 ◽  
Vol 91 (4) ◽  
pp. 761-767 ◽  
Author(s):  
D. HENDERSON ◽  
S. SOKOŁOWSKI ◽  
R. ZAGORSKI ◽  
A. TROKHYMCHUK
Keyword(s):  
Density Profile ◽  
Hard Spheres ◽  
Third Order

Third-order dispersion coefficients for H(1s)-H(1s) system

1999 ◽  
Vol 96 (5) ◽  
pp. 863-865 ◽  
Author(s):  
ZONG-CHAO YAN
Keyword(s):  
Third Order ◽  
Dispersion Coefficients ◽  
Third Order Dispersion ◽  
Order Dispersion

STRUCTURAL RELAXATION AND ATOMIC MOBILITY BY MAGNETIC ANISOTROPY MEASUREMENTS IN SOME METALLIC GLASSES

1981 ◽  
Vol 42 (C5) ◽  
pp. C5-511-C5-516 ◽  
Author(s):  
W. Chambron ◽  
A. Chamberod
Keyword(s):  
Magnetic Anisotropy ◽  
Metallic Glasses ◽  
Structural Relaxation ◽  
Atomic Mobility

CHANGE OF YOUNG'S MODULUS DURING STRUCTURAL RELAXATION IN AMORPHOUS FeB, FeNiB, FeNiP AND FeNiPB

1985 ◽  
Vol 46 (C8) ◽  
pp. C8-561-C8-565
Author(s):  
E. Huizer ◽  
A. van den Beukel
Keyword(s):  
Young’S Modulus ◽  
Structural Relaxation ◽  
Young's Modulus

ANELASTIC BEHAVIOUR OF Ni100- xPxAMORPHOUS ELECTROLESS DEPOSITED ALLOYS DURING STRUCTURAL RELAXATION AND CRYSTALLIZATION

1985 ◽  
Vol 46 (C10) ◽  
pp. C10-481-C10-484
Author(s):  
E. BONETTI ◽  
E. LANZONI ◽  
G. PAPARO
Keyword(s):  
Structural Relaxation
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