Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers
1993 ◽
Vol 32
(Part 2, No. 12A)
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pp. L1750-L1752
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1995 ◽
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2007 ◽
Vol 19
(21)
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pp. 1717-1719
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2005 ◽
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