scholarly journals Spin reorientation transition in ultrathin Co films on the vicinal surface Au(788)

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045009
Author(s):  
R. J. G. Rosa ◽  
R. L. Souza ◽  
G. F. M. Gomes ◽  
R. M. Paniago ◽  
M. D. Martins
2016 ◽  
Vol 93 (6) ◽  
Author(s):  
M. Dąbrowski ◽  
M. Cinal ◽  
M. Przybylski ◽  
G. Chen ◽  
A. T. N'Diaye ◽  
...  

2020 ◽  
Vol 102 (18) ◽  
Author(s):  
C. D. Dashwood ◽  
L. S. I. Veiga ◽  
Q. Faure ◽  
J. G. Vale ◽  
D. G. Porter ◽  
...  

2001 ◽  
Vol 89 (11) ◽  
pp. 7145-7146 ◽  
Author(s):  
E. Y. Vedmedenko ◽  
H. P. Oepen ◽  
J. Kirschner

Author(s):  
A. Quesada ◽  
G. Chen ◽  
A. T. N'Diaye ◽  
P. Wang ◽  
Y. Z. Wu ◽  
...  

Carbon monoxide (CO) adsorption on ultrathin fcc Fe films is known to result in the rotation of magnetization from out-of-plane to in-plane.


2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Wupeng Cai ◽  
Shinji Muraishi ◽  
Ji Shi ◽  
Yoshio Nakamura ◽  
Wei Liu ◽  
...  

Spin reorientation transition phenomena from out-of-plane to in-plane direction with increasing temperature are observed for the 500°C annealed CoPt/AlN multilayer films with different CoPt layer thicknesses. CoPt-AlN interface and volume anisotropy contributions, favoring out-of-plane and in-plane magnetization, respectively, are separately determined at various temperatures. Interface anisotropy exhibits much stronger temperature dependence than volume contribution, hence the temperature-driven spin reorientation transition occurs. Interface anisotropy in this work consists of Néel interface anisotropy and magnetoelastic effect. Magnetoelastic effect degrades rapidly and changes its sign from positive to negative above 200°C, because of the involvement of stress state in CoPt films with temperature. By contrast, Néel interface anisotropy decays slowly, estimated from a Néel mean field model. Thus, the strong temperature dependence of CoPt-AlN interface anisotropy is dominated by the change of magnetoelastic effect.


2012 ◽  
Vol 41 (4) ◽  
pp. 1237-1242 ◽  
Author(s):  
Seong-Hun Park ◽  
In-Hwan Oh ◽  
Sungil Park ◽  
Younbong Park ◽  
Ji Hyun Kim ◽  
...  

1995 ◽  
Vol 140-144 ◽  
pp. 1047-1048 ◽  
Author(s):  
J. Bartolomé ◽  
M.D. Kuz'min ◽  
L.M. García ◽  
I. Plaza ◽  
D. Fruchart ◽  
...  

1999 ◽  
Vol 207 (1-3) ◽  
pp. 121-130 ◽  
Author(s):  
C Zhang ◽  
R.C Mohanty ◽  
H.S Li ◽  
A Raman ◽  
C.G Grenier ◽  
...  

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