Random Field Distribution Function in the Relaxor Ferroelectric Thin Films

2004 ◽  
Vol 298 (1) ◽  
pp. 69-81 ◽  
Author(s):  
M. D. Glinchuk ◽  
E. A. Eliseev ◽  
V. A. Stephanovich
Keyword(s):  
Thin Films ◽  
Distribution Function ◽  
Random Field ◽  
Field Distribution ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films

Pulsed laser deposition of perovskite relaxor ferroelectric thin films

2006 ◽  
Vol 252 (13) ◽  
pp. 4553-4557 ◽  
Author(s):  
N. Scarisoreanu ◽  
M. Dinescu ◽  
F. Craciun ◽  
P. Verardi ◽  
A. Moldovan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films ◽  
Laser Deposition

Thickness Dependence of Random Field Distribution in Thin Films Made of Disordered Ferroelectrics

2005 ◽  
Vol 316 (1) ◽  
pp. 83-88 ◽  
Author(s):  
V. A. Stephanovich ◽  
E. V. Kirichenko ◽  
J. Dróżdż ◽  
H. Dróżdż
Keyword(s):  
Thin Films ◽  
Random Field ◽  
Field Distribution ◽  
Thickness Dependence

Structural properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 relaxor ferroelectric thin films on SrRuO3 conducting oxides

2008 ◽  
Vol 108 (10) ◽  
pp. 1106-1109 ◽  
Author(s):  
Ji Hye Lee ◽  
Mi Ri Choi ◽  
William Jo ◽  
Ji Young Jang ◽  
Mi Young Kim
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films ◽  
Conducting Oxides

Temperature-dependent reversible and irreversible processes in Nb-doped PbZrO3 relaxor ferroelectric thin films

2015 ◽  
Vol 107 (20) ◽  
pp. 202902 ◽  
Author(s):  
Mao Ye ◽  
Haitao Huang ◽  
Tao Li ◽  
Shanming Ke ◽  
Peng Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films ◽  
Irreversible Processes ◽  
Temperature Dependent

Dielectric Anomalies in Relaxor Ferroelectric Thin Films

2002 ◽  
Vol 270 (1) ◽  
pp. 235-240 ◽  
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
S. Leppävuori ◽  
V. Zauls ◽  
K. Kundzinsh ◽  
...  
Keyword(s):  
Thin Films ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films

Fatigue in PZT Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
V. Shur ◽  
E. Nikolaeva ◽  
E. Shishkin ◽  
I. Baturin ◽  
D. Bolten ◽  
...  
Keyword(s):  
Thin Films ◽  
Distribution Function ◽  
Field Distribution ◽  
Fatigue Behavior ◽  
Bias Field ◽  
New Approach ◽  
Pzt Thin Films ◽  
Theoretical Predictions ◽  
Characteristic Evolution ◽  
Internal Bias

AbstractWe have used the new approach to fatigue phenomenon for analysis of the switching current and C-V characteristic evolution during cycling in PZT thin films. It was shown that in accordance with theoretical predictions the rejuvenation stage precedes the fatigue one. We have demonstrated that fatigue behavior corresponds to the spreading of the internal bias field distribution function during ac switching.

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