Fatigue in PZT Thin Films

AbstractWe have used the new approach to fatigue phenomenon for analysis of the switching current and C-V characteristic evolution during cycling in PZT thin films. It was shown that in accordance with theoretical predictions the rejuvenation stage precedes the fatigue one. We have demonstrated that fatigue behavior corresponds to the spreading of the internal bias field distribution function during ac switching.

Download Full-text

Annealing effects on the internal bias field in ferroelectric PZT thin films with self-polarization

Integrated Ferroelectrics ◽

10.1080/10584589908210138 ◽

1999 ◽

Vol 23 (1-4) ◽

pp. 25-43 ◽

Cited By ~ 24

Author(s):

Shan Sun ◽

Yongmei Wang ◽

Paul A. Fuierer ◽

Bruce A. Tuttle

Keyword(s):

Thin Films ◽

Bias Field ◽

Pzt Thin Films ◽

Annealing Effects ◽

Internal Bias ◽

Internal Bias Field

Download Full-text

Self-poling Effects in Sol-gel Derived Pb(Zr1-xTix)O3 Thin Films

MRS Proceedings ◽

10.1557/proc-748-u12.24 ◽

2002 ◽

Vol 748 ◽

Author(s):

Jinrong Cheng ◽

Nan Li ◽

L. Eric Cross ◽

Zhongyan Meng

Keyword(s):

Thin Films ◽

Film Thickness ◽

Piezoelectric Effect ◽

Sol Gel ◽

Bias Field ◽

The Self ◽

Pzt Thin Films ◽

Direct Piezoelectric Effect ◽

Internal Bias ◽

Internal Bias Field

ABSTRACTBased on the direct piezoelectric effect, the measurement of piezoelectric module d33 was conducted to examine the self-poling effect in sol-gel derived Pb(Zr1-xTix)O3 (PZT) thin films. It is observed that as-prepared PZT thin films have piezoelectric responses being dependent upon the film thickness and composition. The higher d33 of 26 pC/N is achieved for ∼0.4 μm thick PZT thin films with Zr/Ti ratio of 53/47. The d33 value decreases with increasing the film thickness for as-prepared PZT thin films, however, increases for the same film after external poling. The origin of the self-poling effect was briefly discussed based on the formation of an internal bias field in PZT thin films.

Download Full-text

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

MRS Proceedings ◽

10.1557/proc-493-189 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 2

Author(s):

C. H. Lin ◽

B. M. Yen ◽

Haydn Chen ◽

T. B. Wu ◽

H. C. Kuo ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Fatigue Behavior ◽

Chemical Vapor ◽

Dielectric Constants ◽

Preferential Orientation ◽

Organic Chemical ◽

Pzt Thin Films ◽

Si Substrates ◽

Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

Download Full-text

Fatigue and Aging in Sol-Gel Derived PZT Thin Films

MRS Proceedings ◽

10.1557/proc-200-277 ◽

1990 ◽

Vol 200 ◽

Cited By ~ 34

Author(s):

W.H. Shepherd

Keyword(s):

Thin Films ◽

Initial Period ◽

Sol Gel ◽

Temperature Sensitive ◽

Physical Processes ◽

Pzt Thin Films ◽

Fatigue Process ◽

Dielectric Layers ◽

Pzt Films ◽

Internal Bias

ABSTRACTTypical fatigue and aging characteristics are reported for thin PZT films prepared using sol-gels. The fatigue process occurs in two steps. There is an initial period, during which the domain matrix of the as formed film is restructured by the cycling and the polarization generally increases, followed by a period in which the polarization decays. The polarization decay may be due, in part, to the formation of dielectric layers at the electrodes. The effects of voltage and temperature on fatigue are reported. Aging is examined as a function of temperature. Measurements of internal bias fields do not support the view that they are the primary cause of aging. Neither fatigue nor aging are temperature sensitive making identification of specific physical processes difficult.

Download Full-text

Random Field Distribution Function in the Relaxor Ferroelectric Thin Films

Ferroelectrics ◽

10.1080/00150190490423246 ◽

2004 ◽

Vol 298 (1) ◽

pp. 69-81 ◽

Cited By ~ 4

Author(s):

M. D. Glinchuk ◽

E. A. Eliseev ◽

V. A. Stephanovich

Keyword(s):

Thin Films ◽

Distribution Function ◽

Random Field ◽

Field Distribution ◽

Relaxor Ferroelectric ◽

Ferroelectric Thin Films

Download Full-text

Frequency dependence of the coercive field and the internal bias field in ferroelectric thin films

Physics of the Solid State ◽

10.1134/s1063783409070075 ◽

2009 ◽

Vol 51 (7) ◽

pp. 1348-1350 ◽

Cited By ~ 8

Author(s):

A. S. Sidorkin ◽

L. P. Nesterenko ◽

S. V. Ryabtsev ◽

A. A. Sidorkin

Keyword(s):

Thin Films ◽

Frequency Dependence ◽

Coercive Field ◽

Bias Field ◽

Ferroelectric Thin Films ◽

Internal Bias ◽

Internal Bias Field

Download Full-text

Dielectric properties and switching processes of ferroelectric superlattices

OAJ Materials and Devices ◽

10.23647/ca.md20200906 ◽

2021 ◽

Vol 5 (2) ◽

Author(s):

A.S. Sidorkin ◽

L.P. Nesterenko ◽

Y. Gagou ◽

P. Saint-Gregoire ◽

A.Yu. Pakhomov ◽

...

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Domain Walls ◽

Bias Field ◽

Average Value ◽

Flexoelectric Effect ◽

Precise Analysis ◽

Internal Bias ◽

Two Stages ◽

Weak Fields

We review dielectric properties of BaZrO3/BaTiO3 (BZ/BT) superlattices deposited on a single-crystal MgO substrate, and having a period of 13.32 nm. These superlattices have specific properties distinguishing them from BZ or BT bulk materials, and from thin films, with a ferroelectric phase transition around 393-395 °?, significantly higher than in bulk samples and thin films of BT, and appearing of second order. The polarization switching occurs in two stages and the precise analysis of experimental data demonstrates that the motion of the domain walls causes the switching processes. We conclude that the mobility of the domain walls decreases on heating. The presence of an internal bias field has been demonstrated and shown to be directed from the superlattice to the substrate, in agreement with an analysis based on the flexoelectric effect. The switching current has been shown to vary in weak fields as 1/E? with the exponent ? much smaller than in thin ferroelectric films. The appearance of the power index ?, which is significantly different from unity, may be due to a decrease in the average value of the switched polarization due to the boundaries between layers of different materials.

Download Full-text