AbstractReversible structural phase change phenomenon of certain chalcogenide materials has been investigated extensively in the past decades. Among various phase change chalcogenide materials, Ge2Sb2Te5 (GST) is the most studied material due to its superior optical, electrical and mechanical properties. One of the challenges in using GST is the poor adhesion between crystalline GeSbTe (c-GST) and the substrate, such as TiN. In this work, the adhesion of the c-GST/TiN interface of two samples deposited by different techniques was characterized using four-point bend, nanoindentation and nanoscratch techniques. The nanoindentation and nanoscratch data agree well with the four point bend data. The paper also discusses the application potential of nanoindentation and nanoscratch techniques as qualitative methods for adhesion evaluation in semiconductor process development.
CsPbBr3 Nanoplatelets: Synthesis and Understanding of Ultraviolet Light-Induced Structural Phase Change and Luminescence Degradation