Ferroelectric memory device with a new mode of operation

1996 ◽  
Vol 189 (1) ◽  
pp. 121-128
Author(s):  
F. Y. Chen ◽  
Y. K. Fang ◽  
M. J. Sun ◽  
Jiann-Ruey Chen
Keyword(s):  
Memory Device ◽  
Mode Of Operation ◽  
Ferroelectric Memory

scholarly journals PERFORMANCE MEASUREMENT OF A MULTI-LEVEL/ANALOG FERROELECTRIC MEMORY DEVICE DESIGN

2007 ◽  
Vol 93 (1) ◽  
pp. 29-38 ◽  
Author(s):  
TODD C. MACLEOD ◽  
THOMAS A. PHILLIPS ◽  
FAT D. HO
Keyword(s):  
Performance Measurement ◽  
Memory Device ◽  
Device Design ◽  
Ferroelectric Memory ◽  
Multi Level

A nonvolatile ferroelectric memory device with a floating gate

1996 ◽  
Vol 69 (21) ◽  
pp. 3275-3276 ◽  
Author(s):  
F. Y. Chen ◽  
Y. K. Fang ◽  
M. J. Sun ◽  
Jiann‐Ruey Chen
Keyword(s):  
Memory Device ◽  
Floating Gate ◽  
Ferroelectric Memory

Empirical reliability models of retention failures in a ferroelectric memory device using SrBi2(Ta,Nb)2O9

1997 ◽  
Vol 17 (1-4) ◽  
pp. 45-55 ◽  
Author(s):  
Y. Shimada ◽  
M. Azuma ◽  
K. Nakao ◽  
S. Chaya ◽  
N. Moriwaki ◽  
...  
Keyword(s):  
Memory Device ◽  
Reliability Models ◽  
Ferroelectric Memory

The antiphon: a device for reliable memory from unreliable components. I

1989 ◽  
Vol 423 (1864) ◽  
pp. 201-218 ◽  
Keyword(s):  
Lower Bound ◽  
Memory Capacity ◽  
Memory Device ◽  
Mode Of Operation ◽  
Excitation Pattern ◽  
Repeated Cycling

A memory device (the antiphon ) is proposed which reverberates an excitation pattern (corresponding to a state of an M -bit memory) between two sets of nodes (α- and β-nodes). The β-nodes may behave unreliably (stochastically). It is shown that reduced versions of the antiphon produce two memory mechanisms now classical: the repeated cycling of a message through the steps of encoding, noisy transmission and decoding, and the Hopfield net. However, the antiphon presents several differences of detail from the Hopfield net; it is also more physically explicit and more easily analysed. One mode of operation of the antiphon is analysed here; this analysis leads to an optimization of the statistics of the network and a lower bound for the memory capacity of the antiphon.

A circuit model for a thin film ferroelectric memory device

1991 ◽  
Vol 116 (1) ◽  
pp. 95-106 ◽  
Author(s):  
A. K. Kulkarni ◽  
G. A. Rohrer ◽  
S. Narayan ◽  
L. D. Mcmillan
Keyword(s):  
Thin Film ◽  
Memory Device ◽  
Circuit Model ◽  
Ferroelectric Memory
Sign in / Sign up

Export Citation Format

Share Document