Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Non-volatile memories based on ferroelectric hafnium oxide, especially the ferroelectric field-effect transistor (FeFET), have outstanding properties, e.g. for the application in neuromorphic circuits. However, material development has focused so far mainly on metal–ferroelectric–metal (MFM) capacitors, while FeFETs are based on metal–ferroelectric–insulator–semiconductor (MFIS) capacitors. Here, the influence of the interface properties, annealing temperature and Si-doping content are investigated. Antiferroelectric-like behavior is strongly suppressed with a thicker interface layer and high annealing temperature. In addition, high-k interface dielectrics allow for thicker interface layers without retention penalty. Moreover, the process window for ferroelectric behavior is much larger in MFIS capacitors compared to MFM-based films. This does not only highlight the substrate dependence of ferroelectric hafnium oxide films, but also gives evidence that the phase diagram of ferroelectric hafnium oxide is defined by the mechanical stress. Graphic Abstract

Influence of Different Solvents and High-Electric-Field Cycling on Morphology and Ferroelectric Behavior of Poly(Vinylidene Fluoride-Hexafluoropropylene) Films

P(VdF-HFP) films are fabricated via a solution casting doctor blade method using high (HVS) and low (LVS) volatile solvents, respectively. The structural properties and the ferroelectric behavior are investigated. The surface structure and crystal phase composition are found to be strongly dependent on the type of solvent. LVS leads to a rougher copolymer surface structure with large spherulites and a lower crystallinity in contrast with HVS. The crystalline phase of copolymer films fabricated with HVS consists almost exclusively of α-phase domains, whereas films from LVS solution show a large proportion of γ-phase domains, as concluded from Raman and X-ray diffraction spectra. Virgin films show no ferroelectric (FE) switching polarization at electric field amplitudes below 180 MV/m, independent of the solvent type, observed in bipolar dielectric displacement—electric field measurements. After applying electric fields of above 180 MV/m, a FE behavior emerges, which is significantly stronger for LVS films. In a repeated measurement, FE polarization switching already occurs at lower fields. A shielding effect may be related to this observation. Additionally, Raman bands of polar γ-phase increase by high-electric-field cycling for the LVS sample. The solvent used and the resulting crystal phase composition of the virgin sample is crucial for the copolymer behavior during bipolar electrical cycling.