ABSTRACTAmorphous silicon carbides (a-SiC) fabricated by Xe+ ion implantation into 6H-SiC (0001) to fluences of 1015 and 1016/cm2 have been annealed at 850 °C for 1 hour. Transmission electron microscopy (TEM) observations revealed that the 1015 Xe+/cm2 implanted sample was completely recrystallized, while most of the a-SiC remains in the 1016 Xe+/cm2 implanted sample. Pair-distribution function analyses of both of the as-implanted samples show that the peak intensity of Si-C heteronuclear bonds is higher and the peak intensities of Si-Si and C-C homonuclear bonds are lower in the 1015 Xe+/cm2 implanted sample, indicating that the atomistic structure of the 1015 Xe+/cm2 implanted sample is more chemically ordered than that of the 1016 Xe+/cm2 implanted sample. This result suggests that more chemically ordered atomistic structure of 1015 Xe+/cm2 implanted a-SiC leads to complete recrystallization during thermal annealing.