Ion dose dependence on solid phase epitaxy of amorphous silicon carbide induced by ion implantation

2002 ◽  
Vol 742 ◽  
Author(s):  
In-Tae Bae ◽  
Manabu Ishimaru ◽  
Yoshihiko Hirotsu
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Pair Distribution Function ◽  
Solid Phase ◽  
Dose Dependence ◽  
Peak Intensity ◽  
Transmission Electron ◽  
Complete Recrystallization ◽  
Atomistic Structure ◽  
Sample Pair

ABSTRACTAmorphous silicon carbides (a-SiC) fabricated by Xe+ ion implantation into 6H-SiC (0001) to fluences of 1015 and 1016/cm2 have been annealed at 850 °C for 1 hour. Transmission electron microscopy (TEM) observations revealed that the 1015 Xe+/cm2 implanted sample was completely recrystallized, while most of the a-SiC remains in the 1016 Xe+/cm2 implanted sample. Pair-distribution function analyses of both of the as-implanted samples show that the peak intensity of Si-C heteronuclear bonds is higher and the peak intensities of Si-Si and C-C homonuclear bonds are lower in the 1015 Xe+/cm2 implanted sample, indicating that the atomistic structure of the 1015 Xe+/cm2 implanted sample is more chemically ordered than that of the 1016 Xe+/cm2 implanted sample. This result suggests that more chemically ordered atomistic structure of 1015 Xe+/cm2 implanted a-SiC leads to complete recrystallization during thermal annealing.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Atomic structure of ion-implantation produced amorphous silicon and amorphous-crystalline interface structure and kinetics

1983 ◽  
Vol 41 ◽  
pp. 122-123
Author(s):  
J. Narayan ◽  
D. Fathy
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Physical Properties ◽  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Atomic Structure ◽  
Solid Phase ◽  
Interface Structure ◽  
Solid Phase Crystallization ◽  
Two Factors

The structure of amorphous silicon determines its physical properties ranging from crystallization kinetics to efficiency of solar cells. One point of particular interest has been the existance of microcrystallites in the amorphous phase. Different crystallization kinetics are obtained for purely amorphous silicon and for amorphous silicon having a trace of crystallinity. The incorporation of dopants into substitutional sites after solid-phase crystallization has been also found to be affected by the degree of amorphousness.The purpose of this investigation was two fold: first, to characterize the structure of amorphous silicon, and second to study the structure of amorphous-crystalline interface. The importance of these two factors in the crystallization phenomena is discussed.

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Transmission Electron Microscopy and Resistivity Measurements on Pd1−x Six Alloys Prepared by Ion Implantation.

1981 ◽  
Vol 7 ◽  
Author(s):  
A. Traverse ◽  
M.O. Ruault ◽  
L. Mendoza-Zelis ◽  
M. Schack ◽  
H. Bernas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Amorphous State ◽  
Dose Dependence ◽  
Preliminary Evidence ◽  
Resistivity Measurements ◽  
Transmission Electron

ABSTRACTAfter 6K implantation of Si in Pd films, resistivity measurements (previously reported (1)) had provided preliminary evidence that an amorphous state had been reached for a composition Pd.80 SiO 20· This result has been recently confirmed by transmission electron microscopy (TEM) observations : diffuse diffraction rings appear in the implanted part of the Pd film. New experiments are reported : - resistivity dose dependence (and temperature dependence) of a 300K Si implanted Pd film ; - in situ TEM experiments to follow the amorphization process during implantation.

Transmission Electron Microscopy and X-Ray Diffraction Analysis of Aluminum-Induced Crystallization of Amorphous Silicon in α-Si:H/Al and Al/α-Si:H Structures

2005 ◽  
Vol 11 (2) ◽  
pp. 133-137 ◽  
Author(s):  
Ram Kishore ◽  
C. Hotz ◽  
H.A. Naseem ◽  
W.D. Brown
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
High Vacuum ◽  
Radiative Heating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Xrd Studies

Solid phase crystallization of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon (α-Si:H) in α-Si:H/Al and Al/α-Si:H structures has been investigated using transmission electron microscopy (TEM) and X-ray diffraction (XRD). Radiative heating has been used to anneal films deposited on carbon-coated nickel (Ni) grids at temperatures between 200 and 400°C for TEM studies. α-Si:H films were deposited on c-Si substrates using high vacuum (HV) PECVD for the XRD studies. TEM studies show that crystallization of α-Si:H occurs at 200°C when Al film is deposited on top of the α-Si:H film. Similar behavior was observed in the XRD studies. In the case of α-Si:H deposited on top of Al films, the crystallization could not be observed at 400°C by TEM and even up to 500°C as seen by XRD.

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

Seeding Solid Phase Crystallization of Amorphous Silicon Films with Embedded Nanocrystals

2008 ◽  
Vol 1066 ◽  
Author(s):  
Curtis Anderson ◽  
Uwe Kortshagen
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Solid Phase ◽  
Silicon Films ◽  
Amorphous Films ◽  
Solid Phase Crystallization ◽  
Transmission Electron ◽  
Quartz Tube Furnace ◽  
Heated Stage

ABSTRACTSilicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.

The Influence Of Ion Implantation On Solid Phase Epitaxy Of Amorphous Silicon Deposited By LPCVD

1985 ◽  
Author(s):  
Wang yang-yuan ◽  
N. W. Cheung ◽  
D. K. Sadana ◽  
C. Jou ◽  
M. Strathman
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Magnetization Peculiarities of Defects in Silicon Produced by Ni+, Co+, Fe+ Ion Implantation

2011 ◽  
Vol 222 ◽  
pp. 82-85
Author(s):  
Aliaksandra Karabko ◽  
Anatoly Dostanko ◽  
Natalia Lapchuk ◽  
Pavels Onufrijevs
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Magnetic Permeability ◽  
Dose Range ◽  
Dose Dependence ◽  
Spin Concentration ◽  
G Factor ◽  
Extreme Character ◽  
P Type ◽  
Fe Ions

Silicon p-type (100) wafers implanted with Ni, Co, Fe ions to a dose range of 3∙1013–3∙1016 cm-2 have been investigated by means of EPR. The g-factor from dangling bonds of silicon modified by Ni, Co, Fe ion implantation is found to be different from the g-factor of amorphous silicon explained by the change of the local magnetic permeability r. Extreme character of the spin concentration on dose dependence is found, being not typical for silicon.

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