A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

2014 ◽  
Vol 28 (15) ◽  
pp. 1888-1895 ◽  
Author(s):  
Yuehang Xu ◽  
Wenli Fu ◽  
Changsi Wang ◽  
Chunjiang Ren ◽  
Haiyan Lu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Large Signal ◽  
Signal Model ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Amplifier Design

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

A Large Signal Model to Improve Linearity of Rf Power Amplifier

2014 ◽  
Vol 519-520 ◽  
pp. 1089-1094
Author(s):  
Shan Wen HU ◽  
Long Xing Shi ◽  
G.P. Li
Keyword(s):  
Power Amplifier ◽  
Transfer Functions ◽  
Phase Variation ◽  
Nonlinear Behavior ◽  
Bipolar Transistors ◽  
Large Signal ◽  
Signal Model ◽  
Rf Power Amplifier ◽  
Proposed Model ◽  
Amplifier Design

Hetero-junction Bipolar Transistors (HBTs) have become very promising devices for power amplifier design in different communication applications. This paper proposes an analytical large signal model to predict nonlinear behavior of InGaP/GaAs HBT. The proposed model is directly fitted from linear model elements using Fourier transfer functions. As a consequence, the proposed large signal model shows good insight of circuit nonlinear behavior, and can be used to analysis large signal parameters of power amplifier. Based on the proposed large signal model, power gain and phase variation of an emitter follower amplify stage under different bias conditions have been analyzed. The calculated results show that: both gain and phase properties exhibit reverse deviation in saturation compared with that in forward amplify region, and can be used to maximize the linearity of power amplifier.

scholarly journals DESIGN OF BROADBAND, HIGH-EFFICIENCY, AND HIGH-LINEARITY GAN HEMT CLASS-J RF POWER AMPLIFIER

2017 ◽  
Vol 72 ◽  
pp. 177-186 ◽  
Author(s):  
Seyed Alireza Mohadeskasaei ◽  
Fuhong Lin ◽  
Xianwei Zhou ◽  
Sani Umar Abdullahi ◽  
Abdurahman Ahmat
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity

RF power amplifier design for high-efficiency applications

2008 ◽  
Author(s):  
Peter Wright ◽  
Chris Roff ◽  
T. Williams ◽  
J. Lees ◽  
J. Benedikt ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Amplifier Design
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