scholarly journals Design of a high efficiency GaN-HEMT RF power amplifier

2015 ◽  
Author(s):  
Nagavenkat K. Gaddam ◽  
Jose Machado da Silva
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt

scholarly journals DESIGN OF BROADBAND, HIGH-EFFICIENCY, AND HIGH-LINEARITY GAN HEMT CLASS-J RF POWER AMPLIFIER

2017 ◽  
Vol 72 ◽  
pp. 177-186 ◽  
Author(s):  
Seyed Alireza Mohadeskasaei ◽  
Fuhong Lin ◽  
Xianwei Zhou ◽  
Sani Umar Abdullahi ◽  
Abdurahman Ahmat
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity

A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

2014 ◽  
Vol 28 (15) ◽  
pp. 1888-1895 ◽  
Author(s):  
Yuehang Xu ◽  
Wenli Fu ◽  
Changsi Wang ◽  
Chunjiang Ren ◽  
Haiyan Lu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Large Signal ◽  
Signal Model ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Amplifier Design

HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE

2004 ◽  
Vol 14 (03) ◽  
pp. 847-852 ◽  
Author(s):  
SHOUXUAN XIE ◽  
VAMSI PAIDI ◽  
STEN HEIKMAN ◽  
LIKUN SHEN ◽  
ALESSANDRO CHINI ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Input Capacitance ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity ◽  
Nonlinear Input ◽  
Class B ◽  
Useful Power ◽  
The One

A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD3) performance over the one without the diode over the useful power range in two-tone measurement.

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

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