scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

2014 ◽  
Vol 28 (15) ◽  
pp. 1888-1895 ◽  
Author(s):  
Yuehang Xu ◽  
Wenli Fu ◽  
Changsi Wang ◽  
Chunjiang Ren ◽  
Haiyan Lu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Rf Power ◽  
Large Signal ◽  
Signal Model ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Amplifier Design

scholarly journals High gain over an octave bandwidth class-F RF power amplifier design using 10W GaN HEM

2020 ◽  
Vol 9 (5) ◽  
pp. 1899-1906
Author(s):  
Noor Syakirah Ruslan Hadi ◽  
Zubaida Yusoff ◽  
Md. Golam Sadeque ◽  
Shaiful Jahari Hashim ◽  
Muhammad Akmal Chaudhary
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Gain ◽  
Base Station ◽  
Rf Power ◽  
Large Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Flat Gain ◽  
Class F

The wireless communication industry grows faster each day. In terms of RF power amplifier (RFPA), the requirements on efficiency, linearity, bandwidth, output power and cost are getting more stringent. RFPA is considered as the most important component because of consuming large power in a base station. In this paper, a systematic approach is used to design a high flat gain class-F RFPA over an octave bandwidth. The simulation of a 1.5GHz class-F power amplifier mode demonstrates a high drain efficiency while accomplishing a high flat gain over a wide bandwidth. To identify the optimum impedance for the output matching and input matching network, the load-pull and source-pull are performed. The simulation results show that the RFPA can deliver a drain efficiency of 68.37 % at the output power of 40.79 dBm with power added efficiency of 66.94 %. The designed PA achieved a high gain between 13 dB to 17 dB from 0.5 GHz to 2.0 GHz of a frequency band. The matching circuits are realized on an FR-4 substrate to keep the cost as low as possible. A 10W GaN HEMT CGH40010 transistor from Cree has been used for this RFPA design.

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