Electronic structure of disordered alloys-local environment effects

1976 ◽  
Vol 9 (14) ◽  
pp. 2733-2737 ◽  
Author(s):  
V Kumar ◽  
D Kumar ◽  
S K Joshi
Keyword(s):  
Electronic Structure ◽  
Local Environment ◽  
Disordered Alloys ◽  
Environment Effects

Local environment effects on the electronic structure of disordered alloys

1973 ◽  
Vol 3 (12) ◽  
pp. 2120-2125 ◽  
Author(s):  
F Brouers ◽  
F Ducastelle ◽  
F Gautier ◽  
J Van Der Rest
Keyword(s):  
Electronic Structure ◽  
Local Environment ◽  
Disordered Alloys ◽  
Environment Effects

Local environment effects in electronic structure: a-GeS contrasted to a-SiHx

1985 ◽  
Vol 77-78 ◽  
pp. 87-90 ◽  
Author(s):  
Jan Mašek ◽  
Václav Drchal ◽  
Jiří Málek ◽  
Bedřich Velický ◽  
Steffen Wilke
Keyword(s):  
Electronic Structure ◽  
Local Environment ◽  
Environment Effects

scholarly journals Local environment effects in the magnetic properties and electronic structure of disordered FePt

2017 ◽  
Vol 95 (1) ◽  
Author(s):  
Saleem Ayaz Khan ◽  
Ján Minár ◽  
Hubert Ebert ◽  
Peter Blaha ◽  
Ondřej Šipr
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Local Environment ◽  
Environment Effects

LOCAL ENVIRONMENT EFFECTS IN DISORDERED ALLOYS

1974 ◽  
Vol 35 (C4) ◽  
pp. C4-89-C4-94 ◽  
Author(s):  
F. BROUERS ◽  
F. DUCASTELLE ◽  
F. GAUTIER ◽  
J. VAN DER REST
Keyword(s):  
Local Environment ◽  
Disordered Alloys ◽  
Environment Effects

Exchange interaction and local environment effects on the magnetic properties ofFeNclusters

1992 ◽  
Vol 46 (16) ◽  
pp. 10432-10436 ◽  
Author(s):  
J. Dorantes-Da´vila ◽  
H. Dreysse´ ◽  
G. M. Pastor
Keyword(s):  
Magnetic Properties ◽  
Exchange Interaction ◽  
Local Environment ◽  
Environment Effects

Local-environment effects in disordered binary metallic alloys

1992 ◽  
Vol 46 (12) ◽  
pp. 7358-7362 ◽  
Author(s):  
M. Yu. Nikolaev ◽  
L. M. Roth ◽  
A. V. Vedyaev
Keyword(s):  
Local Environment ◽  
Metallic Alloys ◽  
Environment Effects ◽  
Binary Metallic Alloys

How Small Is Too Small ? Understanding The Electronic Structure Of Atomic-Scale Transistors

1999 ◽  
Vol 5 (S2) ◽  
pp. 120-121
Author(s):  
D. A. Muller ◽  
T. Sorsch ◽  
S. Moccio ◽  
F. H. Baumann ◽  
K. Evans-Lutterodt ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electrical Properties ◽  
Thermal Oxidation ◽  
Electronic Devices ◽  
Local Environment ◽  
Gate Oxide ◽  
Atomic Scale ◽  
Gate Oxides ◽  
Bulk Properties ◽  
Commercial Use

The transistors planned for commercial use ten years from now in many electronic devices will have gate lengths shorter than 130 atoms, gate oxides thinner than 1.2 nm of SiO2 and clock speeds in excess of 10 GHz. It is now technologically possible to produce such transistors with gate oxides only 5 silicon atoms thick[l]. Since at least two of those 5 atoms are not in a local environment similar to either bulk Si or bulk SiO2, the properties of the interface are responsible for a significant fraction of the “bulk” properties of the gate oxide. However the physical (and especially their electrical) properties of the interfacial atoms are very different from .bulk Si or bulk SiO2. Further, roughness on an atomic scale can alter the leakage current by orders of magnitude.In our studies of such devices, we found that thermal oxidation tends to produce Si/SiO2 interfaces with 0.1-0.2 nm rms roughness.

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