The Faraday effect at near infra-red wavelengths in rare-earth garnets

1966 ◽  
Vol 17 (11) ◽  
pp. 1441-1449 ◽  
Author(s):  
B Johnson
Keyword(s):  
Rare Earth ◽  
Faraday Effect ◽  
Infra Red

The Infra-red Faraday Effect in Germanium

1961 ◽  
Vol 78 (6) ◽  
pp. 1393-1407 ◽  
Author(s):  
A K Walton ◽  
T S Moss
Keyword(s):  
Faraday Effect ◽  
Infra Red

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

On the nature of the Faraday effect in the rare-earth ortho-aluminate TbAlO3

1999 ◽  
Vol 41 (11) ◽  
pp. 1880-1884 ◽  
Author(s):  
U. V. Valiev ◽  
M. M. Lukina ◽  
K. S. Saidov
Keyword(s):  
Rare Earth ◽  
Faraday Effect ◽  
The Rare Earth

Infra-red stimulable rare earth oxy-halide phosphors; their synthesis, properties and applications

1969 ◽  
Vol 4 (6) ◽  
pp. 381-389 ◽  
Author(s):  
L.G. Van Uitert ◽  
H.J. Levinstein ◽  
W.H. Grodkiewicz
Keyword(s):  
Rare Earth ◽  
Infra Red ◽  
Synthesis Properties

The Faraday Effect of Rare-Earth Ions in Garnets

1990 ◽  
Vol 119 (1) ◽  
pp. 307-315 ◽  
Author(s):  
K. M. Mukimov ◽  
B. Yu. Sokolov ◽  
U. V. Valiev
Keyword(s):  
Rare Earth ◽  
Faraday Effect ◽  
Rare Earth Ions

Faraday Effect Devices, Optical Isolators

1998 ◽  
Vol 517 ◽  
Author(s):  
Donald K. Wilson
Keyword(s):  
Rare Earth ◽  
Magnetic Fields ◽  
Faraday Effect ◽  
Fiber Optic ◽  
High Magnetic Fields ◽  
Laser Applications ◽  
Industrial Use ◽  
Critical Components ◽  
Optical Isolators ◽  
Magneto Optic

AbstractAlthough discovered over 150 years ago, it was not until the 1970's that materials were developed that enabled magneto-optic (Faraday) effect devices of practical sizes. These developments are: magneto-optic materials with high Verdet constants, and the rare-earth magnet materials, capable of extremely high magnetic fields.The magneto-optic effect has enabled development of equipment used in diverse laser applications, from industrial use to fiber-optic telecommunications.The principle of operation of optical isolators and circulators is described herein, as well as descriptions of critical components in such equipment, such as the polarizers and the magnets.

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