Photoresponse characteristics of MoS2 QDs/Si nanocone heterojunctions utilizing geometry controlled light trapping mechanism in black Si

2019 ◽  
Vol 30 (48) ◽  
pp. 485202 ◽  
Author(s):  
Arijit Sarkar ◽  
Subhrajit Mukherjee ◽  
Amal Kumar Das ◽  
Samit K Ray
Keyword(s):  
Light Trapping ◽  
Trapping Mechanism

scholarly journals Investigation of light trapping mechanism of Silicon solar cell performance utilizing Silvaco TCAD

2020 ◽  
Vol 1535 ◽  
pp. 012021
Author(s):  
A F Abd Rahim ◽  
M Shamlan ◽  
N S Mohd Razali ◽  
R Radzali ◽  
A Mahmood ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Light Trapping ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Trapping Mechanism

Light-trapping mechanism of subwavelength nanorod arrays

Optik ◽  
2020 ◽  
Vol 216 ◽  
pp. 164862
Author(s):  
Xiaojian Yu ◽  
Chaogang Lou ◽  
Hao Zhang ◽  
Xiaodan Huang ◽  
Hua Yang ◽  
...  
Keyword(s):  
Light Trapping ◽  
Nanorod Arrays ◽  
Trapping Mechanism

Light trapping mechanism of hemisphere cone arrays for silicon solar cells

Solar Energy ◽  
2018 ◽  
Vol 163 ◽  
pp. 519-525 ◽  
Author(s):  
Le Chen ◽  
Qingkang Wang ◽  
Wen Chen ◽  
Daiming Liu ◽  
Zhouxing Zhao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Trapping ◽  
Silicon Solar Cells ◽  
Trapping Mechanism

Enhanced Omnidirectional Optical Absorption in a Nanopatterned Silicon Thin Film for Photovoltaic Applications

2012 ◽  
Vol 512-515 ◽  
pp. 234-237
Author(s):  
Hai Lu ◽  
Chun Hua Xue ◽  
Hong Chen
Keyword(s):  
Thin Film ◽  
Optical Absorption ◽  
Light Trapping ◽  
Photovoltaic Cells ◽  
Silicon Thin Film ◽  
Trapping Mechanism ◽  
Pv Cell ◽  
Photovoltaic Applications ◽  
Absorbing Layer

We show that the optical absorption in thin-film photovoltaic cells can be enhanced by texturing the silicon absorbing layer into nanostructured array. The optical absorption of the proposed configuration is enhanced by 70% compared to a nonpatterned silicon thin film of the same thickness. Furthermore, the proposed silicon thin film PV cell has a good angle-independent response of up to 60°. The omnidirectional absorbance enhancement of the nanopatterned silicon thin film is attributed to its unusual light trapping mechanism and omnidirectional bandgap.

Observation of Superlattice Dislocations on Cube Planes in Ni3Al

1973 ◽  
Vol 31 ◽  
pp. 174-175 ◽  
Author(s):  
J. M. Oblak ◽  
W. H. Rand
Keyword(s):  
Nearest Neighbor ◽  
Antiphase Boundary ◽  
Nearest Neighbors ◽  
High Energy ◽  
Cross Slip ◽  
Octahedral Plane ◽  
Trapping Mechanism ◽  
Slip Traces

The energy of an a/2 <110> shear antiphase. boundary in the Ll2 expected to be at a minimum on {100} cube planes because here strue ture is there is no violation of nearest-neighbor order. The latter however does involve the disruption of second nearest neighbors. It has been suggested that cross slip of paired a/2 <110> dislocations from octahedral onto cube planes is an important dislocation trapping mechanism in Ni3Al; furthermore, slip traces consistent with cube slip are observed above 920°K.Due to the high energy of the {111} antiphase boundary (> 200 mJ/m2), paired a/2 <110> dislocations are tightly constricted on the octahedral plane and cannot be individually resolved.

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