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Cascaded Ni hard mask to create chlorine-based ICP dry etched deep mesas for high-power devices
Semiconductor Science and Technology
◽
10.1088/1361-6641/ac3372
◽
2021
◽
Author(s):
Habib Ahmad
◽
Zachary Engel
◽
Muneeb Zia
◽
Alex S. Weidenbach
◽
Christopher M Matthews
◽
...
Keyword(s):
High Power
◽
Power Devices
◽
Hard Mask
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Cited By
References
Combined Density Functional Theory and Microkinetics Study to Predict Optimum Operating Conditions of Si(100) Surface Carbonization by Acetylene for High Power Devices
The Journal of Physical Chemistry Letters
◽
10.1021/acs.jpclett.1c01044
◽
2021
◽
pp. 4558-4568
Author(s):
Santhanamoorthi Nachimuthu
◽
Tsung-Ruei Chen
◽
Chen-Hao Yeh
◽
Lu-Sheng Hong
◽
Jyh-Chiang Jiang
Keyword(s):
Density Functional Theory
◽
High Power
◽
Density Functional
◽
Operating Conditions
◽
Optimum Operating
◽
Power Devices
◽
Functional Theory
Download Full-text
Effect of carrier lifetime on the forward characteristics of high-power devices
IEEE Transactions on Electron Devices
◽
10.1109/t-ed.1970.17051
◽
1970
◽
Vol 17
(9)
◽
pp. 647-652
◽
Cited By ~ 18
Author(s):
Seok Cheow Choo
Keyword(s):
High Power
◽
Carrier Lifetime
◽
Power Devices
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Virtual testing of high power devices at the rim of the safe operating area and beyond
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
◽
10.1109/ispsd.2014.6855963
◽
2014
◽
Cited By ~ 1
Author(s):
Gerhard Wachutka
Keyword(s):
High Power
◽
Power Devices
◽
Virtual Testing
◽
Safe Operating
Download Full-text
Silicon carbide high-power devices
IEEE Transactions on Electron Devices
◽
10.1109/16.536819
◽
1996
◽
Vol 43
(10)
◽
pp. 1732-1741
◽
Cited By ~ 329
Author(s):
C.E. Weitzel
◽
J.W. Palmour
◽
C.H. Carter
◽
K. Moore
◽
K.K. Nordquist
◽
...
Keyword(s):
Silicon Carbide
◽
High Power
◽
Power Devices
Download Full-text
A compact TM01 mode combiner for phase locked high power devices
2015 IEEE International Vacuum Electronics Conference (IVEC)
◽
10.1109/ivec.2015.7223823
◽
2015
◽
Author(s):
Jiawei Li
◽
Wenhua Huang
◽
Renzhen Xiao
◽
Yuchuan Zhang
◽
Tiezhu Liang
◽
...
Keyword(s):
High Power
◽
Power Devices
Download Full-text
Effect of the Thickness of nickel film interlayer on direct‐bonded aluminum/alumina as Substrate in high‐power devices
International Journal of Applied Ceramic Technology
◽
10.1111/ijac.13706
◽
2021
◽
Author(s):
Wei‐Che Chao
◽
Chien‐Cheng Lin
◽
Kun‐Lin Lin
Keyword(s):
High Power
◽
Nickel Film
◽
Power Devices
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Technology for High-Power Devices
Power Semiconductor Devices and Circuits
◽
10.1007/978-1-4615-3322-1_1
◽
1992
◽
pp. 1-30
Author(s):
Tadahiro Ohmi
Keyword(s):
High Power
◽
Power Devices
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Fiber Lasers: High-Power Devices in Compact Packages
Optics and Photonics News
◽
10.1364/opn.16.6.000036
◽
2005
◽
Vol 16
(6)
◽
pp. 36
◽
Cited By ~ 3
Author(s):
Nasser Peyghambarian
◽
Axel Schülzgen
Keyword(s):
High Power
◽
Fiber Lasers
◽
Power Devices
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Characterizing medium-voltage high-power devices under conventional and soft-switching conditions
Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370)
◽
10.1109/ias.1999.799983
◽
2003
◽
Cited By ~ 6
Author(s):
J. von Bloh
◽
R.W. De Doncker
Keyword(s):
High Power
◽
Soft Switching
◽
Power Devices
◽
Medium Voltage
Download Full-text
Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices
Journal of Applied Physics
◽
10.1063/5.0011638
◽
2020
◽
Vol 127
(21)
◽
pp. 215703
◽
Cited By ~ 1
Author(s):
Habib Ahmad
◽
Travis J. Anderson
◽
James C. Gallagher
◽
Evan A. Clinton
◽
Zachary Engel
◽
...
Keyword(s):
High Power
◽
Power Devices
Download Full-text
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