Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

2018 ◽  
Vol 27 (2) ◽  
pp. 028101
Author(s):  
Yao Xing ◽  
De-Gang Zhao ◽  
De-Sheng Jiang ◽  
Xiang Li ◽  
Zong-Shun Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Near Ultraviolet

Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes

2017 ◽  
Vol 214 (10) ◽  
pp. 1700320
Author(s):  
Yao Xing ◽  
De Gang Zhao ◽  
De Sheng Jiang ◽  
Xiang Li ◽  
Feng Liang ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blocking Layer ◽  
Ultraviolet Laser ◽  
Near Ultraviolet ◽  
Hole Blocking Layer

The abnormal aging phenomena in GaN-based near-ultraviolet laser diodes

2019 ◽  
Vol 52 (27) ◽  
pp. 275104 ◽  
Author(s):  
Jin Wang ◽  
Meixin Feng ◽  
Rui Zhou ◽  
Qian Sun ◽  
Jianxun Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Near Ultraviolet ◽  
Aging Phenomena

Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers

2021 ◽  
Vol 130 (17) ◽  
pp. 173105
Author(s):  
J. Yang ◽  
B. B. Wang ◽  
D. G. Zhao ◽  
Z. S. Liu ◽  
F. Liang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Ultraviolet Laser
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