Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

2020 ◽  
Vol 29 (1) ◽  
pp. 017301
Author(s):  
Yi-Fu Wang ◽  
Mussaab I Niass ◽  
Fang Wang ◽  
Yu-Huai Liu
Keyword(s):  
Recombination Rate ◽  
Radiative Recombination ◽  
Aluminum Content ◽  
Laser Diodes ◽  
Blocking Layer ◽  
Radiative Recombination Rate ◽  
Electron Blocking Layer ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet

Degradation of InGaN-based laser diodes due to increased non-radiative recombination rate

2009 ◽  
Vol 207 (1) ◽  
pp. 41-44 ◽  
Author(s):  
N. Trivellin ◽  
M. Meneghini ◽  
E. Zanoni ◽  
G. Meneghesso ◽  
K. Orita ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Radiative Recombination ◽  
Laser Diodes ◽  
Radiative Recombination Rate

Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells

2020 ◽  
Vol 16 (2) ◽  
pp. 87-91
Author(s):  
Zhong-qiu Xing ◽  
Yong-jie Zhou ◽  
Xue Chen ◽  
Mussaab I. Niass ◽  
Yi-fu Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet
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