Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes onp-type GaAs substrates grown by organometallic vapor phase epitaxy

2009 ◽  
Vol 1 ◽  
pp. 012022
Author(s):  
Y Ota ◽  
K Fujii ◽  
Y Ito ◽  
T Kawasaki ◽  
K Noguchi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Laser Diodes ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Gaas Substrates

Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy

2008 ◽  
Vol 93 (23) ◽  
pp. 231117 ◽  
Author(s):  
Y. Terai ◽  
K. Hidaka ◽  
K. Fujii ◽  
S. Takemoto ◽  
M. Tonouchi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Laser Diodes ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Ultrafast Carrier

GaAs emission from GaInP/Er,O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy

2008 ◽  
Vol 5 (9) ◽  
pp. 2716-2718 ◽  
Author(s):  
Kei Fujii ◽  
Keiji Hidaka ◽  
Dai Yamamoto ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
Keyword(s):  
Vapor Phase ◽  
Laser Diodes ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Co Doped
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