scholarly journals Structure of the interlayer between Au thin film and Si-substrate: Molecular Dynamics simulations

2020 ◽  
Vol 7 (2) ◽  
pp. 026553
Author(s):  
V Plechystyy ◽  
I Shtablavyi ◽  
S Winczewski ◽  
K Rybacki ◽  
S Mudry ◽  
...  
Author(s):  
Veronique Pierron-Bohnes ◽  
R.V.P. Montsouka ◽  
Christine Goyhenex ◽  
T. Mehaddene ◽  
Leila Messad ◽  
...  

2003 ◽  
Vol 2003.56 (0) ◽  
pp. 369-370
Author(s):  
Toraharu RYUTA ◽  
Masayuki KOZASA ◽  
Koji MIYAZAKI ◽  
Hiroshi TSUKAMOTO

1992 ◽  
Vol 285 ◽  
Author(s):  
H. Feil ◽  
J.S.C. Kools ◽  
J. Dieleman

ABSTRACTMolecular dynamics simulations are performed of Cu thin film growth on Cu (111). Ion-Assisted Deposition is simulated by bombarding the substrate with Cu+ ions with a kinetic energy of 80 eV, while 1 eV Cu atoms are used for the simulation of Laser Ablation Deposition. It appears that Ion-Assisted Deposition leads to sputtering, enhanced surface mobility, surface disorder, mixing and rather deep damage. This is discussed in some detail. Laser Ablation Deposition, using laser fluences just above the ablation threshold, does not lead to damage and mixing. Sharper interfaces and more perfect heterostructures and superlattices can be produced using Laser Ablation Deposition.


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