Size effects in the electronic properties of hydrogen and helium embedded in small metal clusters: The self-consistent spherical-jellium-particle model
AbstractWe calculate the electronic properties of austenite and martensite Fe-9%Mn alloys using the self consistent full-potential linearized-plane-wave method under the generalized gradient approximation full lattice relaxation. By minimizing total-energy, the lattice constants in their ground states were determined. We discuss the total energy dependence of the volume, and density of states (DOS).
A tight-binding models which account for band mixing, strain and external applied
potentials in a self-consistent fashion has been developed. This allows us to describe
electronic and optical properties of nanostructured devices beyond the usual envelope
function approximation. This model can be applied to direct and indirect gap
semiconductors thus allowing for instance the self-consistent calculation of band profile
and carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs.
Optical and Electronic Properties of Semiconductor
2D Nanosystems: Self-consistent
Tight-binding Calculations