Measurement of the occupation lengths of channeled 17-MeV electrons and 54-MeV electrons and positrons in silicon by means of channeling radiation

1989 ◽  
Vol 40 (7) ◽  
pp. 4249-4263 ◽  
Author(s):  
J. O. Kephart ◽  
R. H. Pantell ◽  
B. L. Berman ◽  
S. Datz ◽  
H. Park ◽  
...  
2021 ◽  
Vol 16 (12) ◽  
pp. P12042
Author(s):  
A.A. Savchenko ◽  
W. Wagner

Abstract We present a new C++ module for simulation of channeling radiation to be implemented in Geant4 as a discrete physical process. The module allows simulation of channeling radiation from relativistic electrons and positrons with energies above 100 MeV for various types of single crystals. In this paper, we simulate planar channeling radiation applying the classical approach in the dipole approximation as a first attempt not yet considering other contributory processes. Simulation results are proved to be in a rather good agreement with experimental data.


1981 ◽  
Vol 28 (2) ◽  
pp. 1152-1155 ◽  
Author(s):  
R. H. Pantell ◽  
R. L. Swent ◽  
S. Datz ◽  
M. J. Alguard ◽  
B. L. Berman ◽  
...  

1988 ◽  
Vol 302 (4) ◽  
pp. 525-558 ◽  
Author(s):  
J.F. Bak ◽  
J.A. Ellison ◽  
B. Marsh ◽  
F.E. Meyer ◽  
O. Pedersen ◽  
...  

1985 ◽  
Vol 254 ◽  
pp. 491-527 ◽  
Author(s):  
J. Bak ◽  
J.A. Ellison ◽  
B. Marsh ◽  
F.E. Meyer ◽  
O. Pedersen ◽  
...  

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